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Keisuke Yazawa

Keisuke Yazawa contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2025arXiv

Towards a deeper fundamental understanding of (Al,Sc)N ferroelectric nitrides

Density Functional Theory (DFT) calculations, within the virtual crystal alloy approximation, are performed, along with the development of a Landau-type model employing a symmetry-allowed analytical expression of the internal energy and having parameters being determined from first principles, to investigate properties and energetics of Al1-xScxN ferroelectric nitrides in their hexagonal forms. These DFT computations and this model predict the existence of two different types of minima, namely the 4-fold-coordinated wurtzite (WZ) polar structure and a 5-times paraelectric hexagonal phase (to be denoted as H5), for any Sc composition up to 40%. The H5 minimum progressively becomes the lowest energy state within hexagonal symmetry as the Sc concentration increases from 0 to 40%. Furthermore, the model points out to several key findings. Examples include the crucial role of the coupling between polarization and strains to create the WZ minimum, in addition to polar and elastic energies, and that the origin of the H5 state overcoming the WZ phase as the global minimum within hexagonal symmetry when increasing the Sc composition mostly lies in the compositional dependency of only two parameters, one linked to the polarization and another one being purely elastic in nature. Other examples are that forcing Al1-xScxN systems to have no or a weak change in lattice parameters when heating them allows to reproduce well their finite-temperature polar properties, and that a value of the axial ratio close to that of the ideal WZ structure does imply a large polarization at low temperatures but not necessarily at high temperatures because of the ordered-disordered character of the temperature-induced formation of the WZ state. Such findings should allow for a better fundamental understanding of (Al,Sc)N ferroelectric nitrides, which may be used to design efficient devices operating at low voltages.

preprint2022arXiv

A Landau-Devonshire Analysis of Strain Effects on Ferroelectric Al1-xScxN

We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau-Devonshire approach. The electrostrictive and dielectric stiffness coefficients of Al1-xScxN with wurtzite structure (6mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first order phase transition based on the dielectric stiffness relationships. The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these novel wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics. These analysis results reported here explain experimentally reported sensitivity of coercive field to elastic strain/stress in Al1-xScxN films, and would enable further thermodynamic analysis via phase field simulation and related methods.

preprint2022arXiv

Ionic Bonds Control Ferroelectric Behavior in Wurtzite Nitrides

Ferroelectricity enables key integrated technologies from non-volatile memory to precision ultrasound. Wurtzite ferroelectric Al1-xScxN has recently attracted attention because of its robust ferroelectricity and Si process compatibility in addition to being the first known ferroelectric wurtzite. However, the origin and control of ferroelectricity in wurtzite materials is not yet fully understood. Here we show that the local bond ionicity, rather than simply the change in tetrahedral distortion, is key to controlling the macroscopic ferroelectric response, according to our coupled experimental and computational results. Across the composition gradient in Sc < 0.35 range and 140-260 nm thickness in combinatorial thin films of Al1-xScxN, the pure wurtzite phase exhibits a similar c/a ratio regardless of the Sc content, due to elastic interaction with neighboring crystals. The coercive field and spontaneous polarization significantly decrease with increasing Sc content despite this invariant c/a ratio, due to the more ionic bonding nature of Sc-N relative to the more covalent Al-N bonds, supported by DFT calculations. Based on these insights, ionicity engineering is introduced as an approach to reduce coercive field of Al1-xScxN for memory and other applications and to control ferroelectric properties in other wurtzites.