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Researcher profile

Geoff L. Brennecka

Geoff L. Brennecka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

A Landau-Devonshire Analysis of Strain Effects on Ferroelectric Al1-xScxN

We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau-Devonshire approach. The electrostrictive and dielectric stiffness coefficients of Al1-xScxN with wurtzite structure (6mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first order phase transition based on the dielectric stiffness relationships. The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these novel wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics. These analysis results reported here explain experimentally reported sensitivity of coercive field to elastic strain/stress in Al1-xScxN films, and would enable further thermodynamic analysis via phase field simulation and related methods.

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preprint2022arXiv

Ionic Bonds Control Ferroelectric Behavior in Wurtzite Nitrides

Ferroelectricity enables key integrated technologies from non-volatile memory to precision ultrasound. Wurtzite ferroelectric Al1-xScxN has recently attracted attention because of its robust ferroelectricity and Si process compatibility in addition to being the first known ferroelectric wurtzite. However, the origin and control of ferroelectricity in wurtzite materials is not yet fully understood. Here we show that the local bond ionicity, rather than simply the change in tetrahedral distortion, is key to controlling the macroscopic ferroelectric response, according to our coupled experimental and computational results. Across the composition gradient in Sc < 0.35 range and 140-260 nm thickness in combinatorial thin films of Al1-xScxN, the pure wurtzite phase exhibits a similar c/a ratio regardless of the Sc content, due to elastic interaction with neighboring crystals. The coercive field and spontaneous polarization significantly decrease with increasing Sc content despite this invariant c/a ratio, due to the more ionic bonding nature of Sc-N relative to the more covalent Al-N bonds, supported by DFT calculations. Based on these insights, ionicity engineering is introduced as an approach to reduce coercive field of Al1-xScxN for memory and other applications and to control ferroelectric properties in other wurtzites.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis of ferroelectric LaWN3 -- the first nitride perovskite

Next generation telecommunication technologies would benefit from strong piezoelectric and ferroelectric response in materials that are compatible with nitride radio-frequency electronic devices. Ferroelectric oxides with perovskite structure have been used in sensors and actuators for half a century, and halide perovskites transformed photovoltaics research in the past decade, but neither of them is compatible with nitride semiconductors. Nitride perovskites, despite numerous computational predictions, have not been experimentally demonstrated and their properties remain unknown. Here we report the experimental realization of the first nitride perovskite: lanthanum tungsten nitride (LaWN3). Oxygen-free LaWN3 thin films in a polar perovskite structure are confirmed by spectroscopy, scattering, and microscopy techniques. Scanning probe measurements confirm a large piezoelectric response and strongly suggest ferroelectric behavior, making it the first stable nitride ferroelectric compound. These results should lead to integration of LaWN3 with nitride semiconductors for wireless telecommunication applications, while enabling synthesis of many other predicted nitride perovskites.

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