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Keiji Ueno

Keiji Ueno contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Link between Weyl-fermion chirality and spin texture

Topological semimetals have recently attracted great attention due to prospective applications governed by their peculiar Fermi surfaces. Weyl semimetals host chiral fermions that manifest as pairs of non-degenerate massless Weyl points in their electronic structure, giving rise to novel macroscopic quantum phenomena such as the chiral anomaly, an unusual magnetoresistance, and various kinds of Hall effects These properties enable the engineering of non-local electric transport devices, magnetic sensors and memories, and spintronics devices. Nevertheless, little is known about the underlying spin- and orbital-degrees of freedom of the electron wave functions in Weyl semimetals, that govern the electric transport. Here, we give evidence that the chirality of the Weyl points in the Type-II Weyl semimetal MoTe$_2$ is directly linked to the spin texture and orbital angular momentum of the electron wave functions. By means of state-of-the-art spin- and momentum-resolved photoemission spectroscopy the spin- and orbital texture in the Fermi surface is directly resolved. Supported by first-principles calculations, we examined the relationship between the topological chiral charge and spin texture, which significantly contributes to the understanding of the electronic structure in topological quantum materials.

preprint2021arXiv

Twist Angle Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures

In van der Waals (vdW) heterostructures formed by stacking two monolayers of transition metal dichalcogenides, multiple exciton resonances with highly tunable properties are formed and subject to both vertical and lateral confinement. We investigate how a unique control knob, the twist angle between the two monolayers, can be used to control the exciton dynamics. We observe that the interlayer exciton lifetimes in $\text{MoSe}_{\text{2}}$/$\text{WSe}_{\text{2}}$ twisted bilayers (TBLs) change by one order of magnitude when the twist angle is varied from 1$^\circ$ to 3.5$^\circ$. Using a low-energy continuum model, we theoretically separate two leading mechanisms that influence interlayer exciton radiative lifetimes. The shift to indirect transitions in the momentum space with an increasing twist angle and the energy modulation from the moiré potential both have a significant impact on interlayer exciton lifetimes. We further predict distinct temperature dependence of interlayer exciton lifetimes in TBLs with different twist angles, which is partially validated by experiments. While many recent studies have highlighted how the twist angle in a vdW TBL can be used to engineer the ground states and quantum phases due to many-body interaction, our studies explore its role in controlling the dynamics of optically excited states, thus, expanding the conceptual applications of "twistronics".

preprint2020arXiv

Flat bands in twisted bilayer transition metal dichalcogenides

The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of flat bands with localized states and enhanced electronic correlations. In transition metal dichalcogenides, flat bands have been theoretically predicted to occur for long moiré wavelengths over a range of twist angles around 0 and 60 degrees giving much wider versatility than magic angle twisted bilayer graphene. Here we show the existence of a flat band in the electronic structure of 3° and 57.5° twisted bilayer WSe2 samples using scanning tunneling spectroscopy. Direct spatial mapping of wavefunctions at the flat band energy have shown that the flat bands are localized differently for 3° and 57.5°, in excellent agreement with first-principle density functional theory calculations.

preprint2020arXiv

Investigation of laser-induced-metal phase of $\mathrm{MoTe}_{2}$ and its contact property via scanning gate microscopy

Although semiconductor to metal phase transformation of MoTe$_{2}$ by high-density laser irradiation of more than 0.3 MW/cm$^{2}$ has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe$_{2}$. The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe$_{2}$/LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Schottky barrier (a diffusion potential) is always formed at the Pd/2H-MoTe$_{2}$ boundary and obstacles a carrier transport while an Ohmic contact is realized at the 2H-MoTe$_{2}$/LIM phase junction for both n- and p-type carriers.