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Kazuhiko Matsumoto

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Published work

3 published item(s)

preprint2020arXiv

High-Voltage Honeycomb Layered Oxide Positive Electrodes for Rechargeable Sodium Batteries

Natural abundance, impressive chemical characteristics and economic feasibility have rekindled the appeal for rechargeable sodium (Na) batteries as a practical solution for the growing energy demand, environmental sustainability and energy independence. However, the scarcity of viable positive electrode materials remains a huge impediment to the actualization of this technology. In this paper, we explore honeycomb layered oxides adopting the composition Na$_2$Ni$_{2-x}$Co$_x$TeO$_6$ ($x = 0, 0.25$ and $0.50$) as feasible positive electrode (cathode) materials for rechargeable sodium batteries at both room- and elevated temperatures using ionic liquids. Through standard galvanostatic assessments and analyses we demonstrate that substitution of nickel with cobalt in Na$_2$Ni$_2$TeO$_6$ leads to an increase in the discharge voltage to nearly $4$ V (versus Na$^+$ / Na) for the Na$_2$Ni$_{2-x}$Co$_x$TeO$_6$ family of honeycomb layered oxide materials, which surpasses the attained average voltages for most layered oxide positive electrode materials that facilitate Na-ion desertion. We also verify the increased kinetics within the Na$_2$Ni$_{2-x}$Co$_x$TeO$_6$ honeycomb layered oxides during operations at elevated temperatures which lead to an increase in reversible capacity of the rechargeable Na battery. This study underpins the doping of congener transition metal atoms to the honeycomb structure of Na$_2$Ni$_2$TeO$_6$ in addition to elevated-temperature operation as a judicious route to enhance the electrochemical performance of analogous layered oxides.

preprint2016arXiv

Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2

The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given current direction, which has been a limiting factor for spin manipulations. Here we report that in devices based on the bulk-insulating topological insulator BiSbTeSe2, an unexpected switching of spin polarization was observed upon changing the chemical potential. The spin polarization expected from the topological surface states was detected in a heavily electron-doped device, whereas the opposite polarization was reproducibly observed in devices with low carrier densities. We propose that the latter type of spin polarization stems from topologically-trivial two-dimensional states with a large Rashba spin splitting, which are caused by a strong band bending at the surface of BiSbTeSe2 beneath the ferromagnetic electrode used as a spin detector. This finding paves the way for realizing the "spin transistor" operation in future topological spintronic devices.

preprint2014arXiv

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiN_x dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples.