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Kay Yakushiji

Kay Yakushiji appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-eleess.ASeess.SPphysics.app-phSound

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Published work

12 published item(s)

preprint2023arXiv

Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers

We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpendicular magnetic anisotropy (PMA) of 214 uJ/m2 and a voltage-controlled magnetic anisotropy (VCMA) coefficient of -45 fJ/Vm, corresponding to 1.4- and 1.7-fold enhancements in PMA and VCMA, respectively, compared to the case of room-temperature deposition of CoFeB. The improvement in the MTJ properties was not simply due to the morphology of the MTJ films. The interface-sensitive magneto-transport properties indicated that interfacial qualities such as intermixing and oxidation states at the MgO/CoFeB interfaces were improved by the cryogenic temperature deposition. Cryogenic-temperature sputtering deposition is expected to be a standard manufacturing process for next-generation magnetoresistive random-access memory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Binding events through the mutual synchronization of spintronic nano-neurons

The brain naturally binds events from different sources in unique concepts. It is hypothesized that this process occurs through the transient mutual synchronization of neurons located in different regions of the brain when the stimulus is presented. This mechanism of binding through synchronization can be directly implemented in neural networks composed of coupled oscillators. To do so, the oscillators must be able to mutually synchronize for the range of inputs corresponding to a single class, and otherwise remain desynchronized. Here we show that the outstanding ability of spintronic nano-oscillators to mutually synchronize and the possibility to precisely control the occurrence of mutual synchronization by tuning the oscillator frequencies over wide ranges allows pattern recognition. We demonstrate experimentally on a simple task that three spintronic nano-oscillators can bind consecutive events and thus recognize and distinguish temporal sequences. This work is a step forward in the construction of neural networks that exploit the non-linear dynamic properties of their components to perform brain-inspired computations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical Manipulation of a Topological Antiferromagnetic State

Electrical manipulation of emergent phenomena due to nontrivial band topology is a key to realize next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles. It exhibits various exotic phenomena such as large anomalous Hall effect (AHE) and chiral anomaly, which have robust properties due to the topologically protected Weyl nodes. To manipulate such phenomena, the magnetic version of Weyl semimetals would be useful as a magnetic texture may provide a handle for controlling the locations of Weyl nodes in the Brillouin zone. Moreover, given the prospects of antiferromagnetic (AF) spintronics for realizing high-density devices with ultrafast operation, it would be ideal if one could electrically manipulate an AF Weyl metal. However, no report has appeared on the electrical manipulation of a Weyl metal. Here we demonstrate the electrical switching of a topological AF state and its detection by AHE at room temperature. In particular, we employ a polycrystalline thin film of the AF Weyl metal Mn$_3$Sn, which exhibits zero-field AHE. Using the bilayer device of Mn$_3$Sn and nonmagnetic metals (NMs), we find that an electrical current density of $\sim 10^{10}$-$10^{11}$ A/m$^2$ in NMs induces the magnetic switching with a large change in Hall voltage, and besides, the current polarity along a bias field and the sign of the spin Hall angle $θ_{\rm SH}$ of NMs [Pt ($θ_{\rm SH} > 0$), Cu($θ_{\rm SH} \sim 0$), W ($θ_{\rm SH} < 0$)] determines the sign of the Hall voltage. Notably, the electrical switching in the antiferromagnet is made using the same protocol as the one used for ferromagnetic metals. Our observation may well lead to another leap in science and technology for topological magnetism and AF spintronics.

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preprint2020arXiv

Influence of flicker noise and nonlinearity on the frequency spectrum of spin torque nano-oscillators

The correlation of phase fluctuations in any type of oscillator fundamentally defines its spectral shape. However, in nonlinear oscillators, such as spin torque nano oscillators, the frequency spectrum can become particularly complex. This is specifically true when not only considering thermal but also colored $1/f$ flicker noise processes, which are crucial in the context of the oscillator's long term stability. In this study, we address the frequency spectrum of spin torque oscillators in the regime of large-amplitude steady oscillations experimentally and as well theoretically. We particularly take both thermal and flicker noise into account. We perform a series of measurements of the phase noise and the spectrum on spin torque vortex oscillators, notably varying the measurement time duration. Furthermore, we develop the modelling of thermal and flicker noise in Thiele equation based simulations. We also derive the complete phase variance in the framework of the nonlinear auto-oscillator theory and deduce the actual frequency spectrum. We investigate its dependence on the measurement time duration and compare with the experimental results. Long term stability is important in several of the recent applicative developments of spin torque oscillators. This study brings some insights on how to better address this issue.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Role of non-linear data processing on speech recognition task in the framework of reservoir computing

The reservoir computing neural network architecture is widely used to test hardware systems for neuromorphic computing. One of the preferred tasks for bench-marking such devices is automatic speech recognition. However, this task requires acoustic transformations from sound waveforms with varying amplitudes to frequency domain maps that can be seen as feature extraction techniques. Depending on the conversion method, these may obscure the contribution of the neuromorphic hardware to the overall speech recognition performance. Here, we quantify and separate the contributions of the acoustic transformations and the neuromorphic hardware to the speech recognition success rate. We show that the non-linearity in the acoustic transformation plays a critical role in feature extraction. We compute the gain in word success rate provided by a reservoir computing device compared to the acoustic transformation only, and show that it is an appropriate benchmark for comparing different hardware. Finally, we experimentally and numerically quantify the impact of the different acoustic transformations for neuromorphic hardware based on magnetic nano-oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inside the perpendicular spin-torque memristor

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a memristor compatible with Spin-Torque Magnetic Random Access Memory. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature dependence of spin-orbit torques in W/CoFeB bilayers

We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution from interface spin-orbit interactions compared to, for example, Ta. Transmission electron microscopy measurements reveal that considerable interface mixing between W and CoFeB is primarily responsible for this effect.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Twist in the bias-dependence of spin-torques in magnetic tunnel junctions

The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bias-dependence from experiments over large voltage ranges. We study several junctions with different magnetic layer structures of the top electrode. Our results obtained on junctions with symmetric CoFeB electrodes agree well with theoretical calculations. The bias-dependences of asymmetric samples, with top electrodes containing NiFe, however, are twisted compared to the quadratic form generally assumed. Our measurements reveal the complexity of spin-torque mechanisms at large bias.

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preprint2015arXiv

Increased magnetic damping of a single domain wall and adjacent magnetic domains detected by spin torque diode in a nanostripe

We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both domains and domain walls is doubled compared to the damping value of their host magnetic layer. We estimate the contributions to damping arising from dipolar couplings between the different layers in the junction and from the intralayer spin pumping effect. We find that they cannot explain the large damping enhancement that we observe. We conclude that the measured increased damping is intrinsic to large amplitudes excitations of spatially localized modes or solitons such as vibrating or propagating domain walls

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonlinear behavior and mode coupling in spin transfer nano-oscillators

By investigating thoroughly the tunable behavior of coupled modes, we highlight how it provides new means to handle the properties of spin transfer nano-oscillators. We first demonstrate that the main features of the microwave signal associated with coupled vortex dynamics i.e. frequency, spectral coherence, critical current, mode localization, depends drastically on the relative vortex core polarities. Secondly we report a large reduction of the nonlinear linewidth broadening obtained by changing the effective damping through the control of the core configuration. Such a level of control on the nonlinear behavior reinforces our choice to exploit the microwave properties of collective modes for applications of spintronic devices in novel generation of integrated telecommunication devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Response to noise of a spin transfer vortex based nano-oscillator

We investigate experimentally and analytically the impact of thermal noise on the sustained gyrotropic mode of vortex magnetization in spin transfer nano-oscillators and its consequence on the linewidth broadening due to the different nonlinear contributions. Performing some time domain measurements, we are able to extract separately the phase noise and the amplitude noise at room temperature for several values of dc current and perpendicular field. For a theoretical description of the experiments, we extend the general model of nonlinear auto-oscillators to the case of vortex core dynamics and provide some analytical expressions of the response-to-noise of the system as the coupling coefficient between the phase and the amplitude of the vortex core dynamics due to the nonlinearities. From the analysis of our experimental results, we demonstrate the major role of the amplitude-to-phase noise conversion on the linewidth broadening, and propose some solutions to improve the spectral coherence of vortex based spin transfer nano-oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Time-resolved observation of fast domain-walls driven by vertical spin currents in short tracks

We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures we observe very high DW velocities (600 m/s) at current densities below $10^7 A/cm^2$. We show that the efficient spin-transfer torque combined with a short propagation distance allows to avoid the Walker breakdown process, and achieve deterministic, reversible and fast ($\approx$ 1 ns) DW-mediated switching of magnetic tunnel junction elements, which is of great interest to the implementation of fast DW-based spintronic devices.

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