Source author record

Katsuyoshi Komatsu

Katsuyoshi Komatsu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.other

Catalog footprint

What is connected

8works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times10^{12}$ cm$^{-2}$, and suggest a possible increase in mobility over 1000 cm$^{2}$V$^{-1}$s$^{-1}$ by reducing the impurities.

preprint2016arXiv

Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins

Inducing magnetism in graphene holds great promises, such as controlling the exchange interaction with a gate electrode and generating exotic magnetic phases. Coating graphene with magnetic molecules or atoms has so far mostly lead to decreased graphene mobility. In the present work, we show that Pt-porphyrins adsorbed on graphene lead to an enhanced mobility and to gate-dependent magnetism. We report that porphyrins can be donor or acceptor, depending on graphene s initial doping. The porphyrins transfer charge and ionize around the charged impurities on graphene, decreasing the graphene doping and increasing its mobility. In addition, ionized porphyrins carry a magnetic moment. Using the sensitivity of mesoscopic transport to magnetism, in particular the superconducting proximity effect and conductance fluctuations, we explore the magnetic order induced in graphene by the interacting magnetic moments of the ionized porphyrins. Among the signatures of magnetism, we find two-terminal-magnetoresistance fluctuations with an odd component, a tell-tale sign of time reversal symmetry breaking at zero field, that does not exist in uncoated graphene sample. When graphene is connected to superconducting electrodes, the induced magnetism leads to a gate-voltage-dependent suppression of the supercurrent, modified magnetic interference patterns, and gate-voltage-dependent magnetic hysteresis. The magnetic signatures are greatest for long superconductor graphene superconductor junctions and for samples with the highest initial doping, compatible with a greater number of ionized and thus magnetic porphyrins. Our findings suggest that long-range magnetism is induced through graphene by the ionized porphyrins magnetic moment. This magnetic interaction is controlled by the density of carriers in graphene, a tunability that could be exploited in spintronic applications.

preprint2014arXiv

Strain superlattices and macroscale suspension of Graphene induced by corrugated substrates

We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an ordered arrays of silica pillars of variable geometries. Depending on the aspect ratio and sharpness of the corrugated array, graphene can conformally coat the surface, partially collapse, or lay, fakir-like, fully suspended between pillars over tens of micrometers. Upon increase of pillar density, ripples in collapsed films display a transition from random oriented pleats emerging from pillars to ripples linking nearest neighboring pillars organized in domains of given orientation. Spatially-resolved Raman spectroscopy, atomic force microscopy and electronic microscopy reveal uniaxial strain domains in the transferred graphene, which are induced and controlled by the geometry. We propose a simple theoretical model to explain the transition between suspended and collapsed graphene. For the arrays with high aspect ratio pillars, graphene membranes stays suspended over macroscopic distances with minimal interaction with pillars tip apex. It offers a platform to tailor stress in graphene layers and open perspectives for electron transport and nanomechanical applications.

preprint2013arXiv

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform combined experimental and theoretical study on atomically thin MoS2 field effect transistors with varying the number of MoS2 layers (NLs). Experimentally, an intimate relation is observed with a 10-fold degradation in μ for extremely thinned monolayer channels. To accurately describe the carrier scattering process and shed light on the origin of the thinning-induced mobility degradation, a generalized Coulomb scattering model is developed with strictly considering device configurative conditions, i.e., asymmetric dielectric environments and lopsided carrier distribution. We reveal that the carrier scattering from interfacial Coulomb impurities (e.g., chemical residues, gaseous adsorbates and surface dangling bonds) is greatly intensified in extremely thinned channels, resulting from shortened interaction distance between impurities and carriers. Such a pronounced factor may surpass lattice phonons and serve as dominant scatterers. This understanding offers new insight into the thickness induced scattering intensity, highlights the critical role of surface quality in electrical transport and would lead to rational performance improvement strategies for future atomic electronics.

preprint2012arXiv

Superconducting proximity effect through graphene from zero field to the Quantum Hall regime

We investigate the superconducting proximity effect through graphene in the long diffusive junction limit, at low and high magnetic field. The interface quality and sample phase coherence lead to a zero resistance state at low temperature, zero magnetic field, and high doping. We find a striking suppression of the critical current near graphene\rq{}s charge neutrality point, which we attribute to specular reflexion of Andreev pairs at the interface of charge puddles. This type of reflexion, specific to the Dirac band structure, had up to now remained elusive. At high magnetic field the use of superconducting electrodes with high critical field enables the investigation of the proximity effect in the Quantum Hall regime. Although the supercurrent is not directly detectable in our two wire configuration, interference effects are visible which may be attributed to the injection of Cooper pairs into edge states.

preprint2011arXiv

Experimental Evidence of Fluctuation-Dissipation Theorem Violation in a Superspin Glass

We present the experimental observation of the fluctuation-dissipation theorem (FDT) violation in an assembly of interacting magnetic nanoparticles in the low temperature superspin glass phase. The magnetic noise is measured with a two-dimension electron gas Hall probe and compared to the out of phase ac susceptibility of the same ferrofluid. For "intermediate" aging times of the order of 1 h, the ratio of the effective temperature $T_{\rm eff}$ to the bath temperature T grows from 1 to 6.5 when T is lowered from $T_g$ to 0.3 $T_g$, regardless of the noise frequency. These values are comparable to those measured in an atomic spin glass as well as those calculated for a Heisenberg spin glass.

preprint2010arXiv

Anisotropy-axis orientation effect on the magnetization of γ-Fe2O3 frozen ferrofluid

The effect of magnetic anisotropy-axis alignment on the superparamagnetic (SPM) and superspin glass (SSG) states in a frozen ferrofluid has been investigated. The ferrofluid studied here consists of maghemite nanoparticles (γ-Fe2O3, mean diameter = 8.6 nm) dispersed in glycerine at a volume fraction of ~15%. In the high temperature SPM state, the magnetization of aligned ferrofluid increased by a factor varying between 2 and 4 with respect to that in the randomly oriented state. The negative interaction energy obtained from the Curie-Weiss fit to the high temperature susceptibility in the SPM states as well as the SSG phase onset temperature determined from the linear magnetization curves were found to be rather insensitive to the anisotropy axis alignment. The low temperature aging behaviour, explored via "zero-field cooled magnetization" (ZFCM) relaxation measurements, however, show distinct difference in the aging dynamics in the anisotropy-axis aligned and randomly oriented SSG states.

preprint2007arXiv

Aging behavior of spin glasses under bond and temperature perturbations from laser illumination

We have studied the nonequilibrium dynamics of spin glasses subjected to bond perturbation, which was based on the direct change in the spin-spin interaction $ΔJ$, using photo illumination in addition to temperature change $ΔT$. Differences in time-dependent magnetization are observed between that under $ΔT+ΔJ$ and $ΔT$ perturbations with the same $ΔT$. This differences shows the contribution of $ΔJ$ to spin-glass dynamics through the decrease in the overlap length. That is, the overlap length $L_{ΔT+ΔJ}$ under $ΔT+ΔJ$ perturbation is less than $L_{ΔT}$ under $ΔT$ perturbation. Furthermore, we observe the crossover between weakly and strongly perturbed regimes under bond cycling accompanied by temperature cycling. These effects of bond perturbation strongly indicates the existence of both chaos and the overlap length.