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Researcher profile

S. Gueron

S. Gueron contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

6 published item(s)

preprint2016arXiv

Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins

Inducing magnetism in graphene holds great promises, such as controlling the exchange interaction with a gate electrode and generating exotic magnetic phases. Coating graphene with magnetic molecules or atoms has so far mostly lead to decreased graphene mobility. In the present work, we show that Pt-porphyrins adsorbed on graphene lead to an enhanced mobility and to gate-dependent magnetism. We report that porphyrins can be donor or acceptor, depending on graphene s initial doping. The porphyrins transfer charge and ionize around the charged impurities on graphene, decreasing the graphene doping and increasing its mobility. In addition, ionized porphyrins carry a magnetic moment. Using the sensitivity of mesoscopic transport to magnetism, in particular the superconducting proximity effect and conductance fluctuations, we explore the magnetic order induced in graphene by the interacting magnetic moments of the ionized porphyrins. Among the signatures of magnetism, we find two-terminal-magnetoresistance fluctuations with an odd component, a tell-tale sign of time reversal symmetry breaking at zero field, that does not exist in uncoated graphene sample. When graphene is connected to superconducting electrodes, the induced magnetism leads to a gate-voltage-dependent suppression of the supercurrent, modified magnetic interference patterns, and gate-voltage-dependent magnetic hysteresis. The magnetic signatures are greatest for long superconductor graphene superconductor junctions and for samples with the highest initial doping, compatible with a greater number of ionized and thus magnetic porphyrins. Our findings suggest that long-range magnetism is induced through graphene by the ionized porphyrins magnetic moment. This magnetic interaction is controlled by the density of carriers in graphene, a tunability that could be exploited in spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Superconducting proximity effect through graphene from zero field to the Quantum Hall regime

We investigate the superconducting proximity effect through graphene in the long diffusive junction limit, at low and high magnetic field. The interface quality and sample phase coherence lead to a zero resistance state at low temperature, zero magnetic field, and high doping. We find a striking suppression of the critical current near graphene\rq{}s charge neutrality point, which we attribute to specular reflexion of Andreev pairs at the interface of charge puddles. This type of reflexion, specific to the Dirac band structure, had up to now remained elusive. At high magnetic field the use of superconducting electrodes with high critical field enables the investigation of the proximity effect in the Quantum Hall regime. Although the supercurrent is not directly detectable in our two wire configuration, interference effects are visible which may be attributed to the injection of Cooper pairs into edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Conductance fluctuations and field asymmetry of rectification in graphene

We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations' correlation energy and field, which are functions of the diffusion coefficient, have fundamentally different variations with $n$, illustrating the contrast between massive and massless carriers. The field dependent fluctuations are nearly independent of $n$, but the $n$-dependent fluctuations are not universal and are largest at the charge neutrality point. We also measure the second order conductance fluctuations (mesoscopic rectification). Its field asymmetry, due to electron-electron interaction, decays with conductance, as predicted for diffusive systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transport and elastic scattering times as probes of the nature of impurity scattering in single and bilayer graphene

Both transport $τ_{tr}$ and elastic scattering times $τ_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier density are found to be very different in the monolayer and the bilayer. However their ratio $τ_{tr}/τ_{e} $is found to be of the order of $1.5 $ in both systems and independent of the carrier density. These measurements give insight on the nature (neutral or charged) and spatial extent of the scattering centers. Comparison with theoretical predictions yields that the main scattering mechanism in our graphene samples could be due to strong scatterers of short range, inducing resonant scattering, a likely candidate being vacancies.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Contactless photoconductivity measurements on (Si) nanowires

Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate phototransport in both bulk silicon and silicon nanowires using a superconducting multimode resonator operating at frequencies between 0.3 and 3 GHz. We find that whereas the bulk Si response is mainly dissipative, the nanowires exhibit a large dielectric polarizability. This technique is contactless and can be applied to many other semiconducting nanowires and molecules. Our approach also allows to investigate the coupling of electron transport to surface acoustic waves in bulk Si and to electro-mechanical resonances in the nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Tuning the proximity effect in a superconductor-graphene-superconductor junction

We have tuned in situ the proximity effect in a single graphene layer coupled to two Pt/Ta superconducting electrodes. An annealing current through the device changed the transmission coefficient of the electrode/graphene interface, increasing the probability of multiple Andreev reflections. Repeated annealing steps improved the contact sufficiently for a Josephson current to be induced in graphene.

0 citations0 reviewsNo code linkedOpen access