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Katherine Luna

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cond-mat.supr-con cond-mat.mes-hall

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preprint2014arXiv

Point-contact tunneling spectroscopy measurement of Cu$_x$TiSe$_2$: disorder-enhanced Coulomb effects

We performed point-contact spectroscopy tunneling measurements on Cu$_x$TiSe$_2$ bulk with $x=0.02$ and $0.06$ at temperatures ranging from $T=4-40$ K and observe a suppression in the density of states around zero-bias that we attribute to enhanced Coulomb interactions due to disorder. We find that the correlation gap associated with this suppression is related to the zero-temperature resistivity. We use our results to estimate the disorder-free transition temperature and find that the clean limit $T_{c0}$ is close to the experimentally observed $T_c$.

preprint2013arXiv

Disorder Driven Metal-Insulator Transition in BaPb$_{1-x}$Bi$_x$O$_3$ and Inference of Disorder-Free Critical Temperature

We performed point-contact spectroscopy tunneling measurements on single crystal BaPb$_{1-x}$Bi$_x$O$_3$ for $x=0$, $0.19$, $0.25$, and $0.28$ at temperatures ranging from $T=2-40$ K and find a suppression in the density of states at low bias-voltages, which has not previously been reported. The classic square root dependence observed in the density of states fits within the theoretical framework of disordered metals, and we find that the correlation gap disappears around a critical concentration $x_c=0.30$. We also report a linear dependence of the zero-temperature conductivity, $σ_0$, with concentration, where $σ_0=0$ at $x_c=0.30$. We conclude that a disorder driven metal-insulator transition occurs in this material before the onset of the charge disproportionated charge density wave insulator. We explore the possibility of a scaling theory being applicable for this material. In addition, we estimate the disorder-free critical temperature using theory developed by Belitz and Fukuyama et. al. and compare these results to Ba$_{1-x}$K$_x$BiO$_3$.

preprint2011arXiv

Local Interlayer Tunneling Between Two-Dimensional Electron Systems in the Ballistic Regime

We study a theoretical model of virtual scanning tunneling microscopy (VSTM), a proposed application of interlayer tunneling in a bilayer system to locally probe a two-dimensional electron system (2DES) in a semiconductor heterostructure. We consider tunneling for the case where transport in the 2DESs is ballistic, and show that the zero-bias anomaly is suppressed by extremely efficient screening. Since such an anomaly would complicate the interpretation of data from a VSTM, this result is encouraging for efforts to implement such a microscopy technique.