Researcher profile

Karsten Rode

Karsten Rode contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Designing a fully-compensated half-metallic ferrimagnet

Recent experimental work on Mn2RuxGa demonstrates its potential as a compensated ferrimagnetic half-metal (CFHM).Here we present a set of high-throughput ab initio density functional theory calculations and detailed experimental characterisation, that enable us to correctly describe the nominal Mn2RuxGa thin films, in particular with regard to site-disorder and defects. We then construct models that accurately capture all the key features of the Mn-Ru-Ga system, including magnetic compensation and the spin gap at the Fermi level. We find that electronic doping is neccessary, which is achieved with a Mn/Ga ratio smaller than two. Our study shows how composition and substrate-induced biaxial strain can be combined to design the first room-temperature CFHM.

preprint2015arXiv

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular Co90Fe10 (CoFe) free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru spacer. The preferred magnetic state of the free layer is determined by the current polarity and the nature of the interlayer exchange coupling (IEC). Our strategy offers a scalable solution to realize bias-field-free SOT switching that can lead to a generation of SOT-based devices, that combine high storage density and endurance with potentially low power consumption.

preprint2010arXiv

High spin polarization in epitaxial films of ferrimagnetic Mn3Ga

Ferrimagnetic Mn3Ga exhibits a unique combination of low saturation magnetization (Ms = 0.11 MA m-1) and high perpendicular anisotropy with a uniaxial anisotropy constant of Ku = 0.89 MJ m-3. Epitaxial c-axis films exhibit spin polarization as high as 58%, measured using point contact Andreev reflection. These epitaxial films will be able to support thermally stable sub-10 nm bits for spin transfer torque memories.