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K. Yamane

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2011arXiv

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

preprint2011arXiv

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

Using high-quality Fe $_{3}$ Si/ $n^{+}$ -Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$ -type germanium ( $n$ -Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$ -Ge channel. The estimated spin lifetime in $n$ -Ge at 50 K is one order of magnitude shorter than those in $n$ -Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.

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