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K. Y. Zeng

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Published work

3 published item(s)

preprint2020arXiv

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

preprint2020arXiv

NMR study of the spin excitations in the frustrated antiferromagnet Yb(BaBO$_3$)$_3$ with a triangular lattice

In this paper, we study the spin excitation properties of the frustrated triangular-lattice antiferromagnet Yb(BaBO$_3$)$_3$ with nuclear magnetic resonance. From the spectral analysis, neither magnetic ordering nor spin freezing is observed with temperature down to $T=0.26$ K, far below its Curie-Weiss temperature $|θ_w|\sim2.3$ K. From the nuclear relaxation measurement, precise temperature-independent spin-lattice relaxation rates are observed at low temperatures under a weak magnetic field, indicating the gapless spin excitations. Further increasing the field intensity, we observe a spin excitation gap with the gap size proportional to the field intensity. These phenomena suggest a very unusual strongly correlated quantum disordered phase, and the implications for the quantum spin liquid state are further discussed.

preprint2013arXiv

Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions

Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an electric-field-induced strain-mediated magnetoelectric effect in ultrathin CoFeB/MgO magnetic tunnel junction employing non-piezoelectric material, which is a vitally important structure for spintronic devices, by using dynamical magnetoelectric and piezoresponse force microscopy measurement techniques. We show that the applied electric-field induces strain in a few atomic layers of dielectric MgO which is transferred to magnetostrictive CoFeB layer, resulting in a magnetoelectric effect of magnitude up to 80.8 V cm-1 Oe-1 under -0.5 V. The demonstrated strain-mediated magnetoelectric effect with an electric field in magnetic tunnel junctions is a significant step towards exploring magnetoelectrically controlled spintronic devices for low-power and high density magnetic data storage applications.