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Source author record

K. Y. Tan

K. Y. Tan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.ins-det

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Published work

12 published item(s)

preprint2019arXiv

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Silicon quantum processor unit cell operation above one Kelvin

Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at $\sim$1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon $^{28}$Si, attaining single-qubit gate fidelities of 98.6% and coherence time $T_2^*$ = 2$μ$s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped $^4$He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Nanobolometer with Ultralow Noise Equivalent Power

Since the introduction of bolometers more than a century ago, they have been applied in a broad spectrum of contexts ranging from security and the construction industry to particle physics and astronomy. However, emerging technologies and missions call for faster bolometers with lower noise. Here, we demonstrate a nanobolometer that exhibits roughly an order of magnitude lower noise equivalent power, $20\textrm{ zW}/\sqrt{\textrm{Hz}}$, than previously reported for any bolometer. Importantly, it is more than an order of magnitude faster than other low-noise bolometers, with a time constant of 30 $μ$s at $60\textrm{ zW}/\sqrt{\textrm{Hz}}$. These results suggest a calorimetric energy resolution of $0.3\textrm{ zJ}=h\times 0.4$ THz with a time constant of 30 $μ$s. Thus the introduced nanobolometer is a promising candidate for future applications requiring extreme precision and speed such as those in astronomy and terahertz photon counting.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Detection of zeptojoule microwave pulses using electrothermal feedback in proximity-induced Josephson junctions

We experimentally investigate and utilize electrothermal feedback in a microwave nanobolometer based on a normal-metal ($\mbox{Au}_{x}\mbox{Pd}_{1-x}$) nanowire with proximity-induced superconductivity. The feedback couples the temperature and the electrical degrees of freedom in the nanowire, which both absorbs the incoming microwave radiation, and transduces the temperature change into a radio-frequency electrical signal. We tune the feedback in situ and access both positive and negative feedback regimes with rich nonlinear dynamics. In particular, strong positive feedback leads to the emergence of two metastable electron temperature states in the millikelvin range. We use these states for efficient threshold detection of coherent 8.4 GHz microwave pulses containing approximately 200 photons on average, corresponding to $1.1 \mbox{ zJ} \approx 7.0 \mbox{ meV}$ of energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

An accurate single-electron pump based on a highly tunable silicon quantum dot

Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of non-adiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Microwave nanobolometer based on proximity Josephson junctions

We introduce a microwave bolometer aimed at high-quantum-efficiency detection of wave packet energy within the framework of circuit quantum electrodynamics, the ultimate goal being single microwave photon detection. We measure the differential thermal conductance between the detector and its heat bath, obtaining values as low as 5 fW/K at 50 mK. This is one tenth of the thermal conductance quantum and corresponds to a theoretical lower bound on noise-equivalent-power of order $10^{-20}$ $W/\sqrt{\mbox{Hz}}$ at 50 mK. By measuring the differential thermal conductance of the same bolometer design in qualitatively different environments and materials, we determine that electron--photon coupling dominates the thermalization of our nanobolometer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nanoscale broadband transmission lines for spin qubit control

The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and nanotechnology. In this work we discuss rigourous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present a new design for an on-chip, broadband, nanoscale microwave line that optimizes the magnetic field driving a spin qubit, while minimizing the disturbance on a nearby charge sensor. This new structure was successfully employed in a single-spin qubit experiment, and shows that the simulations accurately predict the magnetic field values even at frequencies as high as 30 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunable electromagnetic environment for superconducting quantum bits

We introduce a setup which realises a tunable engineered environment for experiments in circuit quantum electrodynamics. We illustrate this concept with the specific example of a quantum bit, qubit, in a high-quality-factor cavity which is capacitively coupled to another cavity including a resistor. The temperature of the resistor, which acts as the dissipative environment, can be controlled in a well defined manner in order to provide a hot or cold environment for the qubit, as desired. Furthermore, introducing superconducting quantum interference devices (SQUIDs) into the cavity containing the resistor, provides control of the coupling strength between this artificial environment and the qubit. We demonstrate that our scheme allows us to couple strongly to the environment enabling rapid initialization of the system, and by subsequent tuning of the magnetic flux of the SQUIDs we may greatly reduce the resistor-qubit coupling, allowing the qubit to evolve unhindered.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tunable single-photon heat conduction in electrical circuits

We build on the study of single-photon heat conduction in electronic circuits taking into account the back-action of the superconductor--insulator--normal-metal thermometers. In addition, we show that placing capacitors, resistors, and superconducting quantum interference devices (SQUIDs) into a microwave cavity can severely distort the spatial current profile which, in general, should be accounted for in circuit design. The introduction of SQUIDs also allows for in situ tuning of the photonic power transfer which could be utilized in experiments on superconducting quantum bits.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Single-electron shuttle based on a silicon quantum dot

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Single-photon heat conduction in electrical circuits

We study photonic heat conduction between two resistors coupled weakly to a single superconducting microwave cavity. At low enough temperature, the dominating part of the heat exchanged between the resistors is transmitted by single-photon excitations of the fundamental mode of the cavity. This manifestation of single-photon heat conduction should be experimentally observable with the current state of the art. Our scheme can possibly be utilized in remote interference-free temperature control of electric components and environment engineering for superconducting qubits coupled to cavities.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Probe and Control of the Reservoir Density of States in Single-Electron Devices

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

0 citations0 reviewsNo code linkedOpen access