Researcher profile

K. W. Cheah

K. W. Cheah contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2012arXiv

Linear and Nonlinear Fano Resonance on two-dimensional Magnetic Metamaterials

We demonstrate that both linear and nonlinear Fano resonances can be realized on two dimensional magnetic metamaterials. The Fano resonance comes from the interference between localized magnetic plasmon resonance and propagating surface plasmon polaritons. When studying the linear optical response of the metamaterial structure, this interference phenomenon was observed in the ellipsometric spectrum. By finely tailoring the geometrical parameters of the magnetic metamaterial device, the nonlinear Fano response was tuned to a near-infrared wavelength (1.61-1.8 μm) of femtosecond pump laser, and Fano-type modulation of the third harmonic generation was found and agrees well with our theoretical model.

preprint2010arXiv

Origin and the role of device physics in the magnetic field effect in organic semiconductor devices

A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest surge of research interest, its underlying mechanism is still hotly debated. Here we experimentally identify that the magnetic field induced increase of intersystem crossing rate (between either excitons or polaron pairs), and decrease of triplet exciton-polaron quenching rate are responsible for the observed OMFEs. The diversity of observed OMFE results, such as sign change and operating condition dependence, originates from the difference of devices physics.