Source author record

K. W. Cheah

K. W. Cheah appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

Catalog footprint

What is connected

2works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2012arXiv

Linear and Nonlinear Fano Resonance on two-dimensional Magnetic Metamaterials

We demonstrate that both linear and nonlinear Fano resonances can be realized on two dimensional magnetic metamaterials. The Fano resonance comes from the interference between localized magnetic plasmon resonance and propagating surface plasmon polaritons. When studying the linear optical response of the metamaterial structure, this interference phenomenon was observed in the ellipsometric spectrum. By finely tailoring the geometrical parameters of the magnetic metamaterial device, the nonlinear Fano response was tuned to a near-infrared wavelength (1.61-1.8 μm) of femtosecond pump laser, and Fano-type modulation of the third harmonic generation was found and agrees well with our theoretical model.

preprint2010arXiv

Origin and the role of device physics in the magnetic field effect in organic semiconductor devices

A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest surge of research interest, its underlying mechanism is still hotly debated. Here we experimentally identify that the magnetic field induced increase of intersystem crossing rate (between either excitons or polaron pairs), and decrease of triplet exciton-polaron quenching rate are responsible for the observed OMFEs. The diversity of observed OMFE results, such as sign change and operating condition dependence, originates from the difference of devices physics.