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K. Taguchi

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cond-mat.mtrl-sci astro-ph

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preprint2020arXiv

Switching of band inversion and topological surface states by charge density wave

Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe $_2$ , that hosts a charge density wave (CDW) coupled with the band inversion involving V3 $d$ and Te5 $p$ orbitals. Spin- and angle-resolved photoemission spectroscopy with first-principles calculations reveal the huge anisotropic modification of the bulk electronic structure by the CDW formation, accompanying the selective disappearance of Dirac-type spin-polarized topological surface states that exist in the normal state. Thorough three dimensional investigation of bulk states indicates that the corresponding band inversion at the Brillouin zone boundary dissolves upon CDW formation, by transforming into anomalous flat bands. Our finding provides a new insight to the topological manipulation of matters by utilizing CDWs' flexible characters to external stimuli.

preprint2019arXiv

Radial spin texture in elemental tellurium with chiral crystal structure

The chiral crystal is characterized by a lack of mirror symmetry and an inversion center, resulting in the inequivalent right- and left-handed structures. In the noncentrosymmetric crystal structure, the spin and momentum of electrons are locked in the reciprocal space with the help of the spin-orbit interaction. To reveal the spin textures of chiral crystals, here we investigate the spin and electronic structure in p-type semiconductor elemental tellurium with a chiral crystal structure by using spin- and angle-resolved photoemission spectroscopy. Our data demonstrate that the highest valence band crossing the Fermi level has a spin component parallel to the electron momentum around the BZ corners. Significantly, we have also confirmed that the spin polarization is reversed in the crystal with the opposite chirality. The results indicate that the spin textures of the right- and left-handed chiral crystals are hedgehog-like, leading to unconventional magnetoelectric effects and nonreciprocal phenomena.

preprint2006arXiv

Hard X-ray Detector (HXD) on Board Suzaku

The Hard X-ray Detector (HXD) on board Suzaku covers a wide energy range from 10 keV to 600 keV by combination of silicon PIN diodes and GSO scintillators. The HXD is designed to achieve an extremely low in-orbit back ground based on a combination of new techniques, including the concept of well-type active shield counter. With an effective area of 142 cm^2 at 20 keV and 273 cm2 at 150 keV, the background level at the sea level reached ~1x10^{-5} cts s^{-1} cm^{-2} keV^{-1} at 30 keV for the PI N diodes, and ~2x10^{-5} cts s^{-1} cm^{-2} keV^{-1} at 100 keV, and ~7x10^{-6} cts s^{-1} cm^{-2} keV^{-1} at 200 keV for the phoswich counter. Tight active shielding of the HXD results in a large array of guard counters surrounding the main detector parts. These anti-coincidence counters, made of ~4 cm thick BGO crystals, have a large effective area for sub-MeV to MeV gamma-rays. They work as an excellent gamma-ray burst monitor with limited angular resolution (~5 degree). The on-board signal-processing system and the data transmitted to the ground are also described.

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