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K. Shen

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Published work

10 published item(s)

preprint2023arXiv

Longitudinal and transverse spin transfer to $Λ$ and $\overlineΛ$ hyperons in polarized $p$+$p$ collisions at $\sqrt{s} = 200$ GeV

The longitudinal and transverse spin transfers to $Λ$ ($\overlineΛ$) hyperons in polarized proton-proton collisions are expected to be sensitive to the helicity and transversity distributions, respectively, of (anti-)strange quarks in the proton, and to the corresponding polarized fragmentation functions. We report improved measurements of the longitudinal spin transfer coefficient, $D_{LL}$, and the transverse spin transfer coefficient, $D_{TT}$, to $Λ$ and $\overlineΛ$ in polarized proton-proton collisions at $\sqrt{s}$ = 200 GeV by the STAR experiment at RHIC. The data set includes longitudinally polarized proton-proton collisions with an integrated luminosity of 52 pb$^{-1}$, and transversely polarized proton-proton collisions with a similar integrated luminosity. Both data sets have about twice the statistics of previous results and cover a kinematic range of $|η_{Λ(\overlineΛ)}|$ $<$ 1.2 and transverse momentum $p_{T,{Λ(\overlineΛ)}}$ up to 8 GeV/$c$. We also report the first measurements of the hyperon spin transfer coefficients $D_{LL}$ and $D_{TT}$ as a function of the fractional jet momentum $z$ carried by the hyperon, which can provide more direct constraints on the polarized fragmentation functions.

preprint2014arXiv

Theory of coupled spin-charge transport due to spin-orbit interaction in inhomogeneous two-dimensional electron liquids

Spin-orbit interactions in two-dimensional electron liquids are responsible for many interesting transport phenomena in which particle currents are converted to spin polarizations and spin currents and viceversa. Prime examples are the spin Hall effect, the Edelstein effect, and their inverses. By similar mechanisms it is also possible to partially convert an optically induced electron-hole density wave to a spin density wave and viceversa. In this paper we present a unified theoretical treatment of these effects based on quantum kinetic equations that include not only the intrinsic spin-orbit coupling from the band structure of the host material, but also the spin-orbit coupling due to an external electric field and a random impurity potential. The drift-diffusion equations we derive in the diffusive regime are applicable to a broad variety of experimental situations, both homogeneous and non-homogeneous, and include on equal footing "skew scattering" and "side-jump" from electron-impurity collisions. As a demonstration of the strength and usefulness of the theory we apply it to the study of several effects of current experimental interest: the inverse Edelstein effect, the spin-current swapping effect, and the partial conversion of an electron-hole density wave to a spin density wave in a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit couplings, subject to an electric field.

preprint2012arXiv

Electron spin rephasing in $n$-type (001) GaAs quantum wells

We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $π$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is based on the kinetic spin Bloch equation approach with all the relevant scatterings explicitly included. We find that the rephasing pulse sequence with a long inter-pulse spacing only has a marginal influence on the spin lifetime in both the strong and weak scattering limits. We show that the spin lifetime can be significantly increased by reducing the inter-pulse spacing. More interestingly, we show that the temperature and density dependences of the spin lifetime in the case of short inter-pulse spacing coincide with those of the momentum scattering time in the low temperature regime, where nonmonotonic behaviors can appear. The origin of this feature is that the scattering under the quick rephasing manipulation mainly performs as the source of the dephasing channel instead of the key to suppress the inhomogeneous broadening. The contributions of the relevant scattering mechanisms are also discussed.

preprint2011arXiv

Energy spectra of three electrons in Si/SiGe single and vertically coupled double quantum dots

We study three-electron energy spectra in Si/SiGe single and vertically coupled double quantum dots where all the relevant effects, such as, the Zeeman splitting, spin-orbit coupling, valley coupling and electron-electron Coulomb interaction are explicitly included. In the absence of magnetic field, our results in single quantum dots agree well with the experiment by Borselli {\em et al.} [Appl. Phys. Lett. {\bf 98}, 123118 (2011)]. We identify the spin and valley configurations of the ground state in the experimental cases and give a complete phase-diagram-like picture of the ground state configuration with respect to the dot size and valley splitting. We also explicitly investigate the three-electron energy spectra of the pure and mixed valley configurations with magnetic fields in both Faraday and Voigt configurations. We find that the ground state can be switched between doublet and quartet by tuning the magnetic field and/or dot size. The three-electron energy spectra present many anticrossing points between different spin states due to the spin-orbit coupling, which are expected to benefit the spin manipulation. We show that the negligibly small intervalley Coulomb interaction can result in magnetic-field independent quartet-doublet degeneracy in the three-electron energy spectrum of the mixed valley configuration. Furthermore, we study the barrier-width and barrier-height dependences in vertically coupled double quantum dots with both pure and mixed valley configurations. Similar to the single quantum dot case, anticrossing behavior and quartet-doublet degeneracy are observed.

preprint2011arXiv

Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs

We investigate the temperature dependence of the coefficients in the Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs by employing the Zener model. We first calculate the hole spin relaxation time based on the microscopic kinetic equation. We find that the hole spin relaxation time is typically several tens femtoseconds and can present a nonmonotonic temperature dependence due to the variation of the interband spin mixing, influenced by the temperature related Zeeman splitting. With the hole spin relaxation time, we are able to calculate the coefficients in the Landau-Lifshitz-Gilbert equation, such as the Gilbert damping, nonadiabatic spin torque, spin stiffness and vertical spin stiffness coefficients. We find that the nonadiabatic spin torque coefficient $β$ is around $0.1\sim 0.3$ at low temperature, which is consistent with the experiment [Adam {\em et al.}, Phys. Rev. B {\bf 80}, 193204 (2009)]. As the temperature increases, $β$ monotonically increases and can exceed one in the vicinity of the Curie temperature. In the low temperature regime with $β<1$, the Gilbert damping coefficient $α$ increases with temperature, showing good agreement with the experiments [Sinova {\em et al.}, Phys. Rev. B {\bf 69}, 085209 (2004); Khazen {\em et al.}, {\em ibid.} {\bf 78}, 195210 (2008)]. Furthermore, we predict that $α$ decreases with increasing temperature once $β>1$ near the Curie temperature. We also find that the spin stiffness decreases with increasing temperature, especially near the Curie temperature due to the modification of the finite $β$. Similar to the Gilbert damping, the vertical spin stiffness coefficient is also found to be nonmonotonically dependent on the temperature.

preprint2011arXiv

Spin diffusion in $n$-type (111) GaAs quantum wells

We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in $n$-type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin-orbit coupling term and the Rashba term can be partially canceled by each other. A peak of the spin diffusion length due to the cancellation is predicted in the perpendicular electric field dependence. It is shown that the spin diffusion length around the peak can be markedly controlled via temperature and doping. When the electron gas enters into the degenerate regime, the electron density also leads to observable influence on the spin diffusion in the strong cancellation regime. Furthermore, we find that the spin diffusion always presents strong anisotropy with respect to the direction of the injected spin polarization. The anisotropic spin diffusion depends on whether the electric field is far away from or in the strong cancellation regime.

preprint2011arXiv

Spin-orbit coupling and $g$-factor of $X$-valley in cubic GaN

We report our theoretically investigation on the spin-orbit coupling and $g$-factor of the $X$-valley in cubic GaN. We find that the spin-orbit coupling coefficient from $sp^3d^5s^\ast$ tight-binding model is 0.029\,eV$\cdot$Å, which is comparable with that in cubic GaAs. By employing the ${\bf k}\cdot{\bf p}$ theory, we find that the $g$-factor in this case is only slightly different from the free electron $g$-factor. These results are expected to be important for the on-going study on spin dynamics far away from equilibrium in cubic GaN.

preprint2010arXiv

Effect of spin-conserving scattering on Gilbert damping in ferromagnetic semiconductors

The Gilbert damping in ferromagnetic semiconductors is theoretically investigated based on the $s$-$d$ model. In contrast to the situation in metals, all the spin-conserving scattering in ferromagnetic semiconductors supplies an additional spin relaxation channel due to the momentum dependent effective magnetic field of the spin-orbit coupling, thereby modifies the Gilbert damping. In the presence of a pure spin current, we predict a new contribution due to the interplay of the anisotropic spin-orbit coupling and a pure spin current.

preprint2010arXiv

Hole spin relaxation in intrinsic and $p$-type bulk GaAs

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D'yakonov-Perel' and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on the temperature and predict a valley in the density dependence of the hole spin relaxation time at low temperature due to the hole-electron scattering. In $p$-type GaAs, we predict a peak in the spin relaxation time against the hole density at low temperature, which originates from the distinct behaviors of the screening in the degenerate and nondegenerate regimes. The competition between the screening and the momentum exchange during scattering events can also lead to a valley in the density dependence of the hole spin relaxation time in the low density regime. At high temperature, the effect of the screening is suppressed due to the small screening constant. Moreover, we predict a nonmonotonic dependence of the hole spin relaxation time on temperature associated with the screening together with the hole-phonon scattering. Finally, we find that the D'yakonov-Perel' mechanism can markedly contribute to the .... (omitted due to the limit of space)

preprint2010arXiv

Singlet-triplet relaxation in multivalley silicon single quantum dots

We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden rule. The electron-electron Coulomb interaction, which is crucial in the electronic structure, is explicitly included. The multivalley effect induced by the interface scattering is also taken into account. We first study the configuration with a magnetic field in the Voigt configuration and identify the relaxation channel of the experimental data by Xiao {\em et al.} [Phys. Rev. Lett. {\bf 104}, 096801 (2010)]. Good agreement with the experiment is obtained. Moreover, we predict a peak in the magnetic-field dependence of the singlet-triplet relaxation rate induced by the anticrossing of the singlet and triplet states. We then work on the system with a magnetic field in the Faraday configuration, where the different values of the valley splitting are discussed. In the case of large valley splitting, we find the transition rates can be effectively manipulated by varying the external magnetic field and the dot size. The intriguing features of the singlet-triplet relaxation in the vicinity of the anticrossing point are analyzed. In the case of small valley splitting, we find that the transition rates are much smaller than those in the case of large valley splitting, resulting from the different configurations of the triplet states.