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Researcher profile

K. S. Vasu

K. S. Vasu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallBiological Physics

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Published work

6 published item(s)

preprint2016arXiv

Van der Waals pressure and its effect on trapped interlayer molecules

Van der Waals assembly of two-dimensional (2D) crystals continue attract intense interest due to the prospect of designing novel materials with on-demand properties. One of the unique features of this technology is the possibility of trapping molecules or compounds between 2D crystals. The trapped molecules are predicted to experience pressures as high as 1 GPa. Here we report measurements of this interfacial pressure by capturing pressure-sensitive molecules and studying their structural and conformational changes. Pressures of 1.2 +/- 0.3 GPa are found using Raman spectrometry for molecular layers of one nanometer in thickness. We further show that this pressure can induce chemical reactions and several trapped salts or compounds are found to react with water at room temperature, leading to 2D crystals of the corresponding oxides. This pressure and its effect should be taken into account in studies of van der Waals heterostructures and can also be exploited to modify materials confined at the atomic interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Detection of Sugar-Lectin Interactions by Multivalent Dendritic Sugar Functionalized Single-Walled Carbon Nanotubes

We show that single walled carbon nanotubes (SWNT) decorated with sugar functionalized poly (propyl ether imine) (PETIM) dendrimer is a very sensitive platform to quantitatively detect carbohydrate recognizing proteins, namely, lectins. The changes in electrical conductivity of SWNT in field effect transistor device due to carbohydrate - protein interactions form the basis of present study. The mannose sugar attached PETIM dendrimers undergo charge - transfer interactions with the SWNT. The changes in the conductance of the dendritic sugar functionalized SWNT after addition of lectins in varying concentrations were found to follow the Langmuir type isotherm, giving the concanavalin A (Con A) - mannose affinity constant to be 8.5 x 106 M-1. The increase in the device conductance observed after adding 10 nM of Con A is same as after adding 20 \muM of a non - specific lectin peanut agglutinin, showing the high specificity of the Con A - mannose interactions. The specificity of sugar-lectin interactions was characterized further by observing significant shifts in Raman modes of the SWNT.

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preprint2011arXiv

Femtosecond Photoexcited Carrier Dynamics in Reduced Graphene Oxide Suspensions and Films

We report ultrafast response of femtosecond photoexcited carriers in single layer reduced graphene oxide flakes suspended in water as well as few layer thick film deposited on indium tin oxide coated glass plate using pump-probe differential transmission spectroscopy at 790 nm. The carrier relaxation dynamics has three components: ~200 fs, 1 to 2 ps, and ~25 ps, all of them independent of pump fluence. It is seen that the second component (1 to 2 ps) assigned to the lifetime of hot optical phonons is larger for graphene in suspensions whereas other two time constants are the same for both the suspension and the film. The value of third order nonlinear susceptibility estimated from the pump-probe experiments is compared with that obtained from the open aperture Z-scan results for the suspension.

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preprint2010arXiv

Femtosecond carrier dynamics and saturable absorption in graphene suspensions

Nonlinear optical properties and carrier relaxation dynamics in graphene, suspended in three different solvents, are investigated using femtosecond (80 fs pulses) Z-scan and degenerate pumpprobe spectroscopy at 790 nm. The results demonstrate saturable absorption property of graphene with a nonlinear absorption coefficient, $beta$, of ~2 to 9x10^-8 cm/W. Two distinct time scales associated with the relaxation of photoexcited carriers, a fast one in the range of 130-330 fs (related to carrier-carrier scattering) followed by a slower one in 3.5-4.9 ps range (associated with carrier-phonon scattering) are observed.

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preprint2010arXiv

Graphene analogue BCN: femtosecond nonlinear optical susceptibility and hot carrier dynamics

Third-order nonlinear absorption and refraction coefficients of a few-layer boron carbon nitride (BCN) and reduced graphene oxide (RGO) suspensions have been measured at 3.2 eV in the femtosecond regime. Optical limiting behavior is exhibited by BCN as compared to saturable absorption in RGO. Nondegenerate time-resolved differential transmissions from BCN and RGO show different relaxation times. These differences in the optical nonlinearity and carrier dynamics are discussed in the light of semiconducting electronic band structure of BCN vis-à-vis the Dirac linear band structure of graphene.

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preprint2010arXiv

Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

We demonstrate top-gated field effect transistor made of reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. Raman spectrum of RGO flakes of typical size of 5μm x 5μm show a single 2D band at 2687 cm-1, characteristic of a single layer graphene. The two probe current - voltage measurements of RGO flakes, deposited in between the patterned electrodes with a gap of 2.5 μm using a.c. dielectrophoresis show ohmic behavior with a resistance of ~ 37kΩ. The temperature dependence of the resistance (R) of RGO measured between temperatures 305 K to 393 K yields temperature coefficient of resistance [dR/dT]/R ~ -9.5x10-4 K-1, same as mechanically exfoliated single layer graphene. The field effect transistor action was obtained by electrochemical top-gating using solid polymer electrolyte (PEO + LiClO4) and Pt wire. Ambipolar nature of graphene flakes is observed upto a doping level of ~ 6x1012/cm2 and carrier mobility of ~ 50 cm2V-1sec-1. The source - drain current characteristics shows a tendency of current saturation at high source - drain voltage which is analyzed quantitatively by a diffusive transport model.

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