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Researcher profile

K. S. Tikhonov

K. S. Tikhonov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-phcond-mat.dis-nncond-mat.mtrl-scicond-mat.str-elphysics.atom-ph

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Published work

4 published item(s)

preprint2026arXiv

Spin vs. position conjugation in quantum simulations with atoms: application to quantum chemistry

The permutation symmetry is a fundamental attribute of the collective wavefunction of indistinguishable particles. It makes a difference for the behavior of collective systems having different quantum statistics but existing in the same environment. Here we show that for some specific quantum conjugation between the spin and spatial degrees of freedom the indistinguishable particles can behave similarly for either quantum statistics. In particular, a mesoscopically scaled collection of atomic qubits, mediated by optical tweezers, can model the behavior of a valent electronic shell compounded with nuclear centers in molecules. This makes possible quantum simulations of mono and divalent bonds in quantum chemistry by manipulation of up to four bosonic atoms confined with optical microtraps.

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preprint2022arXiv

Coupled dynamics of spin qubits in optical dipole microtraps

Single atoms in dipole microtraps or optical tweezers have recently become a promising platform for quantum computing and simulation. Here we report a detailed theoretical analysis of the physics underlying an implementation of a Rydberg two-qubit gate in such a system -- a cornerstone protocol in quantum computing with single atoms. We focus on a blockade-type entangling gate and consider various decoherence processes limiting its performance in a real system. We provide numerical estimates for the limits on fidelity of the maximally entangled states and predict the full process matrix corresponding to the noisy two-qubit gate. Our methods and results may find implementation in numerical models for simulation and optimization of neutral atom based quantum processors.

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preprint2022arXiv

The effect of elastic disorder on single electron transport through a buckled nanotube

We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that in this regime the transport through the transistor is extremely sensitive to elastic disorder. In particular, built-in curvature (random or regular) leads to the ``elastic curvature blockade'': appearance of threshold bias voltage in the $I$-$V$ curve which can be larger than the Coulomb-blockade-induced one. In the case of a random curvature, an additional plateau in dependence of the average current on a bias voltage appears.

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preprint2020arXiv

Magnetotransport and internodal tunnelling in Weyl semimetals

Internodal dynamics of quasiparticles in Weyl semimetals manifest themselves in hydrodynamic, transport and thermodynamic phenomena and are essential for potential valleytronic applications of these systems. In an external magnetic field, coherent quasiparticle tunnelling between the nodes modifies the quasiparticle dispersion and, in particular, opens gaps in the dispersion of quasiparticles at the zeroth Landau level. We study magnetotransport in a Weyl semimetal taking into account mechanisms of quasiparticle scattering both affected by such gaps and independent of them. We compute the longitudal resistivity of a disordered Weyl semimetal with two nodes in a strong magnetic field microscopically and demonstrate that in a broad range of magnetic fields it has a strong angular dependence $ρ(η)\propto C_1+C_2 \cos^2η$, where $η$ is the angle between the field and the separation between the nodes in momentum space. The first term is determined by the coherent internodal tunnelling and is important only at angles $η$ close to $π/2$. This contribution depends exponentially on the magnetic field, $\propto \exp\left(-B_0/B\right)$. The second term is weakly dependent on the magnetic field for realistic concentrations of the impurities in a broad interval of fields.

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