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Researcher profile

K. R. Brown

K. R. Brown contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phphysics.atom-phphysics.ins-detcond-mat.mes-hall

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Published work

10 published item(s)

preprint2026arXiv

Design and characterization of a cryogenic vacuum chamber for ion trapping experiments

We present the design and characterization of a cryogenic vacuum chamber incorporating mechanical isolation from vibrations, a high numerical-aperture in-vacuum imaging objective, in-vacuum magnetic shielding, and an antenna for global radio-frequency manipulation of trapped ions. The cold shield near 4 K is mechanically referenced to an underlying optical table via thermally insulating supports and exhibits root-mean-square vibrations less than 7.61(4) nm. Using the in-vacuum objective, we can detect 397 nm photons from a trapped $^{40}\mathrm{Ca}^{+}$ ion with 1.77% efficiency and achieve 99.9963(4)% single-shot state-detection fidelity in 50 $μ$s. To characterize the efficacy of the magnetic shields, we perform Ramsey experiments on the ground state qubit and obtain a coherence time of 24(2) ms, which extends to 0.25(1) s with a single spin-echo pulse. XY4 and XY32 dynamical decoupling sequences driven via the radio-frequency antenna extend the coherence to 0.72(2) s and 0.81(3) s, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ball-grid array architecture for microfabricated ion traps

State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with $^{40}$Ca$^+$ ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with $^{171}$Yb$^+$ ions in a second BGA trap.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

In-Vacuum Active Electronics for Microfabricated Ion Traps

The advent of microfabricated ion traps for the quantum information community has allowed research groups to build traps that incorporate an unprecedented number of trapping zones. However, as device complexity has grown, the number of digital-to-analog converter (DAC) channels needed to control these devices has grown as well, with some of the largest trap assemblies now requiring nearly one hundred DAC channels. Providing electrical connections for these channels into a vacuum chamber can be bulky and difficult to scale beyond the current numbers of trap electrodes. This paper reports on the development and testing of an in-vacuum DAC system that uses only 9 vacuum feedthrough connections to control a 78-electrode microfabricated ion trap. The system is characterized by trapping single and multiple $^{40}$Ca$^+$ ions. The measured axial mode stability, ion heating rates, and transport fidelities for a trapped ion are comparable to systems with external(air-side) commercial DACs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large Scale Modular Quantum Computer Architecture with Atomic Memory and Photonic Interconnects

The practical construction of scalable quantum computer hardware capable of executing non-trivial quantum algorithms will require the juxtaposition of different types of quantum systems. We analyze a modular ion trap quantum computer architecture with a hierarchy of interactions that can scale to very large numbers of qubits. Local entangling quantum gates between qubit memories within a single register are accomplished using natural interactions between the qubits, and entanglement between separate registers is completed via a probabilistic photonic interface between qubits in different registers, even over large distances. We show that this architecture can be made fault-tolerant, and demonstrate its viability for fault-tolerant execution of modest size quantum circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Microwave Near-Field Quantum Control of Trapped Ions

Microwave near-field quantum control of spin and motional degrees of freedom of 25Mg+ ions can be used to generate two-ion entanglement, as recently demonstrated in Ospelkaus et al. [Nature 476, 181 (2011)]. Here, we describe additional details of the setup and calibration procedures for these experiments. We discuss the design and characteristics of the surface-electrode trap and the microwave system, and compare experimental measurements of the microwave near-fields with numerical simulations. Additionally, we present a method that utilizes oscillating magnetic-field gradients to detect micromotion induced by the ponderomotive radio-frequency potential in linear traps. Finally, we discuss the present limitations of microwave-driven two-ion entangling gates in our system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Single-qubit-gate error below 10^-4 in a trapped ion

With a 9Be+ trapped-ion hyperfine-states qubit, we demonstrate an error probability per randomized single-qubit gate of 2.0(2) x 10^-5, below the threshold estimate of 10^-4 commonly considered sufficient for fault-tolerant quantum computing. The 9Be+ ion is trapped above a microfabricated surface-electrode ion trap and is manipulated with microwaves applied to a trap electrode. The achievement of low single-qubit-gate errors is an essential step toward the construction of a scalable quantum computer.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coupled quantized mechanical oscillators

The harmonic oscillator is one of the simplest physical systems but also one of the most fundamental. It is ubiquitous in nature, often serving as an approximation for a more complicated system or as a building block in larger models. Realizations of harmonic oscillators in the quantum regime include electromagnetic fields in a cavity [1-3] and the mechanical modes of a trapped atom [4] or macroscopic solid [5]. Quantized interaction between two motional modes of an individual trapped ion has been achieved by coupling through optical fields [6], and entangled motion of two ions in separate locations has been accomplished indirectly through their internal states [7]. However, direct controllable coupling between quantized mechanical oscillators held in separate locations has not been realized previously. Here we implement such coupling through the mutual Coulomb interaction of two ions held in trapping potentials separated by 40 um (similar work is reported in a related paper [8]). By tuning the confining wells into resonance, energy is exchanged between the ions at the quantum level, establishing that direct coherent motional coupling is possible for separately trapped ions. The system demonstrates a building block for quantum information processing and quantum simulation. More broadly, this work is a natural precursor to experiments in hybrid quantum systems, such as coupling a trapped ion to a quantized macroscopic mechanical or electrical oscillator [9-13].

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Microwave quantum logic gates for trapped ions

Control over physical systems at the quantum level is a goal shared by scientists in fields as diverse as metrology, information processing, simulation and chemistry. For trapped atomic ions, the quantized motional and internal degrees of freedom can be coherently manipulated with laser light. Similar control is difficult to achieve with radio frequency or microwave radiation because the essential coupling between internal degrees of freedom and motion requires significant field changes over the extent of the atoms' motion. The field gradients are negligible at these frequencies for freely propagating fields; however, stronger gradients can be generated in the near-field of microwave currents in structures smaller than the free-space wavelength. In the experiments reported here, we coherently manipulate the internal quantum states of the ions on time scales of 20 ns. We also generate entanglement between the internal degrees of freedom of two atoms with a gate operation suitable for general quantum computation. We implement both operations through the magnetic fields from microwave currents in electrodes that are integrated into the micro-fabricated trap structure and create an entangled state with fidelity 76(3) %. This approach, where the quantum control mechanism is integrated into the trapping device in a scalable manner, can potentially benefit quantum information processing, simulation and spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Reduction of anomalous heating in an in-situ-cleaned ion trap

Anomalous heating of trapped atomic ions is a major obstacle to their use as quantum bits in a scalable quantum computer. The physical origin of this heating is not fully understood, but experimental evidence suggests that it is caused by electric-field noise emanating from the surface of the trap electrodes. In this study, we have investigated the role that adsorbates on the electrodes play by identifying contaminant overlayers, developing an in situ argon-ion beam cleaning procedure, and measuring ion heating rates before and after cleaning the trap electrodes' surfaces. We find a reduction of two orders of magnitude in heating rate after cleaning.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.

0 citations0 reviewsNo code linkedOpen access