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K. Post

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2 publications

preprint2011arXiv

From antiferromagnetic insulator to correlated metal in pressurized and doped LaMnPO

Widespread adoption of superconducting technologies requires the discovery of new materials with enhanced properties, especially higher superconducting transition temperatures Tc_{c}. The unexpected discovery of high Tc_{c} superconductivity in cuprates and in materials as diverse as heavy fermions, organic conductors, and endohedrally-doped fullerenes suggests that the highest Tc_{c}s occur when pressure or doping transform the localized and moment-bearing electrons in antiferromagnetic insulators into itinerant and weakly magnetic metals. The absence of this delocalization transition in Fe-based superconductors may limit their Tc_{c}s, but even larger Tc_{c}s may be possible in their isostructural Mn analogs, which are antiferromagnetic insulators like the cuprates. It is generally believed that prohibitively large pressures would be required to suppress the strong Hund's rule coupling in these Mn-based compounds, collapsing the insulating gap and enabling superconductivity. Indeed, no Mn-based compounds are known to be superconductors. The electronic structure calculations and x-ray diffraction measurements presented here challenge these long held beliefs, finding that only modest pressures are required to transform LaMnPO, isostructural to superconducting host LaFeAsO, from an insulating tetragonal structure with a large Mn moment to a gapless orthorhombic structure with a small Mn moment. Proximity to this electronic delocalization transition in LaMnPO results in a highly interacting metallic state, the familiar breeding ground of superconductivity.

preprint2011arXiv

Gap states in insulating LaMnPO1−x_{1-x}Fx_{x} (x = 0 - 0.3)

Infrared transmission and electrical resistivity measurements reveal that single crystals of LaMnPO1−x_{1-x}Fx_{x} (x ≤\leq 0.28) are insulating. The optical gap obtained from transmission measurements is nearly unaffected by doping, decreasing only slightly from 1.3 eV in undoped LaMnPO to 1.1 eV for x = 0.04. The activation gaps obtained from electrical resistivity measurements are smaller by at least an order of magnitude, signalling the presence of states within the optical gap. At low temperatures, the resistivity is described well by variable range hopping conduction between these localized gap states. Analysis of the hopping conduction suggests that the gap states become slightly more delocalized with fluorine content, although metallic conduction is not observed even for fluorine concentrations as large as x = 0.28.

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