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K. Otsuka

K. Otsuka contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Robust chirality memory in carbon nanotubes growing under modulated and evolving environments

Controlling the chirality and yield of carbon nanotubes is essential for their diverse applications from macroscopic composites to nanoelectronics. Floating-catalyst chemical vapor deposition is widely employed as a scalable synthesis route, where catalysts inevitably traverse spatially varying environments. However, prevailing interpretations of nanotube growth largely rely on ensemble monitoring or static, post-growth snapshots. Here, we combine digital isotope labeling with programmed temperature modulation to reconstruct the dynamic growth histories of supported individual nanotubes. Growth rates exhibit hysteresis and extraordinary sensitivity to temperature changes, indicating irreversible catalyst coarsening; nevertheless, the nanotube chirality remains robustly preserved across lengths exceeding 300 um. This sharp contrast between kinetic adaptability and structural memory in nanotube growth indicates that chirality control can be established at the nucleation stage, while allowing independent optimization of subsequent elongation. Our findings further call for a re-examination of static interpretations of diameter-determination mechanisms derived from post-growth snapshots.

preprint2021arXiv

Formation of Organic Color Centers in Air-Suspended Carbon Nanotubes Using Vapor-Phase Reaction

Organic color centers in single-walled carbon nanotubes have demonstrated exceptional ability to generate single photons at room temperature in the telecom range. Combining the color centers with pristine air-suspended tubes would be desirable for improved performance, but all current synthetic methods occur in solution which makes them incompatible. Here we demonstrate formation of color centers in air-suspended nanotubes using vapor-phase reaction. Functionalization is directly verified on the same nanotubes by photoluminescence spectroscopy, with unambiguous statistics from more than a few thousand individual nanotubes. The color centers show a strong diameter-dependent emission intensity, which can be explained with a theoretical model for chemical reactivity taking into account strain along the tube curvature. We are also able to estimate the defect density by comparing the experiments with simulations based on a one-dimensional diffusion equation, whereas the analysis of diameter dependent peak energies gives insight to the nature of the dopant states. Time-resolved measurements show a longer lifetime for color center emission compared to E$_{11}$ exciton states. Our results highlight the influence of the tube structure on vapor-phase reactivity and emission properties, providing guidelines for development of high-performance near-infrared quantum light sources.

preprint2021arXiv

Universal map of gas-dependent kinetic selectivity in carbon nanotube growth

Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model and provide its quantitative verification by ethanol-based isotope labeling experiments. While the removal of carbon from catalysts dominates the growth kinetics under a low supply of precursors, our kinetic model and experiments demonstrate that chirality-dependent growth rates emerge when sufficient amounts of carbon and etching agents are co-supplied. As the model can be extended to create kinetic maps as a function of gas compositions, our findings resolve discrepancies in literature and offer rational strategies for chirality selective growth for practical applications.

preprint2020arXiv

Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics

Hexagonal boron nitride is widely used as a substrate for two-dimensional materials in both electronic and photonic devices. Here, we demonstrate that two-dimensional hexagonal boron nitride is also an ideal substrate for one-dimensional single-walled carbon nanotubes. Nanotubes directly attached to hexagonal boron nitride show bright photoluminescence with narrow linewidth at room temperature, comparable to air-suspended nanotubes. Using photoluminescence excitation spectroscopy, we unambiguously assign the chiralities of nanotubes on boron nitride by tracking individual tubes before and after contact with boron nitride. Although hexagonal boron nitride has a low dielectric constant and is attached to only one side of the nanotubes, we observe that optical transition energies are redshifted as much as ~50 meV from the air-suspended nanotubes. We also perform statistical measurements on more than 400 tubes, and the redshifts are found to be dependent on tube diameter. This work opens up new possibilities for all-solid-state carbon nanotube photonic devices by utilizing hexagonal boron nitride substrates.