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Researcher profile

K. MacLean

K. MacLean contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2010arXiv

Contactless measurement of electrical conductance of a thin film of amorphous germanium

We present a contactless method for measuring charge in a thin film of amorphous germanium (a-Ge) with a nanoscale silicon MOSFET charge sensor. This method enables the measurement of conductance of the a-Ge film even in the presence of blocking contacts. At high bias voltage, the resistance of the contacts becomes negligible and a direct measurement of current gives a conductance that agrees with that from the measurement of charge. This charge-sensing technique is used to measure the temperature- and field-dependence of the conductance, and they both agree with a model of Mott variable-range hopping. From the model, we obtain a density of states at the Fermi energy of 1.6 x 10^18 eV^-1 cm^-3 and a localization length of 1.06 nm. This technique enables the measurement of conductance as low as 10^-19 S.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Electrical control of spin relaxation in a quantum dot

We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W= (T_1)^-1 by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions and from these data we extract the spin-orbit length. We also measure the dependence of W on magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1T, where T_1 exceeds 1s.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spin-Dependent Tunneling of Single Electrons into an Empty Quantum Dot

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the ratio decreases with increasing magnetic field until tunneling into the excited spin state is completely suppressed. However, we find that by adjusting the voltages on the surface gates to change the orbital configuration of the dot we can restore tunneling into the excited spin state and that the ratio reaches a maximum when the dot is symmetric.

0 citations0 reviewsNo code linkedOpen access