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Iuliana P. Radu

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cond-mat.mes-hall

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preprint2007arXiv

Electrical control of spin relaxation in a quantum dot

We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W= (T_1)^-1 by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions and from these data we extract the spin-orbit length. We also measure the dependence of W on magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1T, where T_1 exceeds 1s.

preprint2007arXiv

Spin-Dependent Tunneling of Single Electrons into an Empty Quantum Dot

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the ratio decreases with increasing magnetic field until tunneling into the excited spin state is completely suppressed. However, we find that by adjusting the voltages on the surface gates to change the orbital configuration of the dot we can restore tunneling into the excited spin state and that the ratio reaches a maximum when the dot is symmetric.

preprint2006arXiv

Energy Dependent Tunneling in a Quantum Dot

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.