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K. M. Borysenko

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

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preprint2013arXiv

Electron-Phonon Coupling in Wurtzite Semiconductors: Intervalley Scattering Selection Rules for Hexagonal GaN

Selection rules are presented for electron-phonon scattering in GaN with the wurtzite crystal structure. The results are obtained for the interband scattering between the lowest conduction band ($Γ$-valley) and the second conduction band ($U$-valley). These selection rules are derived based on the original group-theoretical analysis of the crystal vibrations in GaN, which included detailed compatibility relations for all phonon modes.

preprint2011arXiv

Electron Transport Properties of Bilayer Graphene

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in bilayer than in monolayer graphene, with significantly reduced mobilities and saturation velocities, the calculation also reveals the dominant influence of extrinsic factors such as the substrate and impurities. Accordingly, the difference between two graphene forms are more muted in realistic settings although the velocity-field characteristics remain substantially lower in the bilayer. When bilayer graphene is subject to an interlayer bias, the resulting changes in the energy dispersion lead to stronger electron scattering at the bottom of the conduction band. The mobility decreases significantly with the size of the generated bandgap, whereas the saturation velocity remains largely unaffected.

preprint2010arXiv

Electron-Phonon Interactions in Bilayer Graphene: A First Principles Approach

Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more resemblance with bulk graphite than monolayer graphene. In particular, electron-phonon scattering in the lowest conduction band is dominated by six lowest (acoustic and acoustic-like) phonon branches with only minor contributions from optical modes. The total scattering rate at low/moderate electron energies can be described by a simple two-phonon model in the deformation potential approximation with effective constants Dac $\approx$ 15 eV and Dop $\approx 2.8 \times 108$ eV/cm for acoustic and optical phonons, respectively. With much enhanced acoustic phonon scattering, the low field mobility of bilayer graphene is expected to be significantly smaller than that of monolayer graphene.

preprint2009arXiv

First Principles Analysis of Electron-Phonon Interaction in Graphene

The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane phonon branches and must be considered simultaneously. Moreover, the calculated scattering rates suggest an acoustic phonon contribution that is much weaker than previously thought, revealing the role of optical phonons even at low energies. Accordingly it is predicted, in good agreement with a recent measurement, that the intrinsic mobility of graphene may be more than an order of magnitude larger than the high values reported in suspended samples.