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K. Levchenko

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2 published item(s)

preprint2020arXiv

Engineered magnetization and exchange stiffness in direct-write Co-Fe nanoelements

Media with engineered magnetization are essential building blocks in superconductivity, magnetism and magnon spintronics. However, the established thin-film and lithographic techniques insufficiently suit the realization of planar components with on-demand-tailored magnetization in the lateral dimension. Here, we demonstrate the engineering of the magnetic properties of CoFe-based nanodisks fabricated by the mask-less technique of focused electron beam induced deposition (FEBID). The material composition in the nanodisks is tuned \emph{in-situ} via the e-beam waiting time in the FEBID process and their post-growth irradiation with Ga ions. The magnetization $M_s$ and exchange stiffness $A$ of the disks are deduced from perpendicular ferromagnetic resonance measurements. The achieved $M_s$ variation in the broad range from $720$ emu/cm$^3$ to $1430$ emu/cm$^3$ continuously bridges the gap between the $M_s$ values of such widely used magnonic materials as permalloy and CoFeB. The presented approach paves a way towards nanoscale 2D and 3D systems with controllable and space-varied magnetic properties.

preprint2016arXiv

Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Postgrowth annealing treatment has been shown to enhance the hole concentration and Curie temperature in the layers. Significant increase in the magnitude of magnetotransport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. Two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices.