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K. Horiba

K. Horiba appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

14 published item(s)

preprint2022arXiv

Modulation of magnetic property of double-perovskite La2MnCoO6 films by controlling B-antisite disorder

The predicted physical properties of double perovskites have usually been compromised by their intrinsic B-antisite (AS) disorder effect, but the relationship between them is still unclear for the La2MnCoO6 (LMCO) system. This study focuses on controlling the AS disorder and quantitatively reveals correlations with magnetic and electronic states in epitaxial LMCO films grown on (111) SrTiO3 substrates. The AS fraction was precisely controlled by tuning the growth conditions as evaluated from saturation magnetization and x-ray reflection profiles. The saturation magnetization at 5 K decreased linearly from 6 uB per formula unit by 50% as the AS fraction increased from 0 (perfectly ordered) to 0.5 (fully disordered). The x-ray absorption spectroscopy revealed that valence states of Mn and Co were 4+ (3d^3) and 2+ (3d^7), respectively, regardless of AS fraction. A local-spin-moment model is proposed to explain the net magnetizations with and without AS disorder and Mn/Co valence states, suggesting that only the rearrangement of local spin moment of Co at the antisite plays a key role in tuning the magnetism in this LMCO system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES

The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of Pr1.3-xLa0.7CexCuO4-δ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained from samples annealed by the conventional methods. Here, we report on a systematic angle-resolved photoemission spectroscopy study of PLCCO single crystals after protect annealing. The results indicate that the actual electron concentration (nFS ) estimated from the Fermi-surface area is significantly larger than the Ce concentration x and the new nFS-based SC dome of PLCCO is more extended towards the overdoped side than the x-based SC dome derived for samples prepared using the conventional annealing method.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Switching of band inversion and topological surface states by charge density wave

Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe$_2$, that hosts a charge density wave (CDW) coupled with the band inversion involving V3$d$ and Te5$p$ orbitals. Spin- and angle-resolved photoemission spectroscopy with first-principles calculations reveal the huge anisotropic modification of the bulk electronic structure by the CDW formation, accompanying the selective disappearance of Dirac-type spin-polarized topological surface states that exist in the normal state. Thorough three dimensional investigation of bulk states indicates that the corresponding band inversion at the Brillouin zone boundary dissolves upon CDW formation, by transforming into anomalous flat bands. Our finding provides a new insight to the topological manipulation of matters by utilizing CDWs' flexible characters to external stimuli.

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preprint2020arXiv

Tunable two-dimensional electron system at the (110) surface of SnO$_2$

We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band.

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preprint2019arXiv

Evolution of electronic states and emergence of superconductivity in the polar semiconductor GeTe by doping valence-skipping In

GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tuned In doping. Our results moreover show the existence of a critical doping concentration around $x = 0.12$ in Ge$_{1-x}$In$_{x}$Te, where various properties take either an extremum or change their characters: The structure changes from polarly-rhombohedral to cubic, the resistivity sharply increases by orders of magnitude, the type of charge carriers changes from holes to electrons, and the density of states diminishes at the dawn of an emerging superconducting phase. By core-level photoemission spectroscopy we find indications of a change in the In-valence state from In$^{3+}$ to In$^{1+}$ with increasing $x$, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?

We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fermi Surfaces and $p$-$d$ Hybridization in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

The electronic structure of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn $3d$ orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $Γ$ point, a hole corrugated cylinder surrounding the $Γ$ and Z points, and an electron pocket around the Z point are observed, and explain the metallic transport of Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$. This is contrasted with Ga$_{1-x}$Mn$_{x}$As (GaMnAs), where it is located above the As $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo resonance-like) Mn $3d$ impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn $3d$ and the As $4p$ orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ and in the impurity band in GaMnAs.

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preprint2014arXiv

Coexistence of Bloch electrons and glassy electrons in Ca10(Ir4As8)(Fe2_xIrxAs2)5 revealed by angle-resolved photoemission spectroscopy

Angle-resolved photoemission spectroscopy of Ca10(Ir4As8)(Fe2_xIrxAs2)5 shows that the Fe 3d electrons in the FeAs layer form the hole-like Fermi pocket at the zone center and the electron-like Fermi pockets at the zone corners as commonly seen in various Fe-based superconductors. The FeAs layer is heavily electron doped and has relatively good two dimensionality. On the other hand, the Ir 5d electrons are metallic and glassy probably due to atomic disorder related to the Ir 5d orbital instability. Ca10(Ir4As8)(Fe2_xIrxAs2)5 exhibits a unique electronic state where the Bloch electrons in the FeAs layer coexist with the glassy electrons in the Ir4As8 layer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fate of $yz$/$zx$ orbital degeneracy and $xy$ Fermi surface in Ru substituted FeSe$_{1-x}$Te$_{x}$

We have investigated the impact of Ru substitution on the multi-band electronic structure of FeSe$_{1-x}$Te$_x$ by means of angle-resolved photoemission spectroscopy (ARPES). The ARPES results exhibit suppression of the $xy$ Fermi surface and the spectral broadening near the zone boundaries, which can be associated with the lattice disorder introduced by the Ru substitution. The degeneracy of the Fe 3$d$ $yz$/$zx$ bands at the zone center, which is broken in FeSe$_{1-x}$Te$_x$, is partly recovered with the Ru substitution, indicating coexistence of nematic and non-nematic electronic states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Te 5p orbitals bring three-dimensional electronic structure to two-dimensional Ir0.95Pt0.05Te2

We have studied the nature of the three-dimensional multi-band electronic structure in the twodimensional triangular lattice Ir1-xPtxTe2 (x=0.05) superconductor using angle-resolved photoemission spectroscopy (ARPES), x-ray photoemission spectroscopy (XPS) and band structure calculation. ARPES results clearly show a cylindrical (almost two-dimensional) Fermi surface around the zone center. Near the zone boundary, the cylindrical Fermi surface is truncated into several pieces in a complicated manner with strong three-dimensionality. The XPS result and the band structure calculation indicate that the strong Te 5p-Te 5p hybridization between the IrTe2 triangular lattice layers is responsible for the three-dimensionality of the Fermi surfaces and the intervening of the Fermi surfaces observed by ARPES.

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preprint2012arXiv

Self-Energy Effects on the Low- to High-Energy Electronic Structure of SrVO3

The correlated electronic structure of SrVO3 has been investigated by angle-resolved photoemission spectroscopy using in-situ prepared thin films. Pronounced features of band renormalization have been observed: a sharp kink ~60 meV below the Fermi level (EF) and a broad so-called "high-energy kink" ~0.3 eV below EF as in the high-Tc cuprates although SrVO3 does not show magnetic fluctuations. We have deduced the self-energy in a wide energy range by applying the Kramers-Kronig relation to the observed spectra. The obtained self-energy clearly shows a large energy scale of ~0.7 eV which is attributed to electron-electron interaction and gives rise to the ~0.3 eV "kink" in the band dispersion as well as the incoherent peak ~1.5eV below EF. The present analysis enables us to obtain consistent picture both for the incoherent spectra and the band renormalization.

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preprint2006arXiv

Evidence for mass renormalization in LaNiO$"" sub 3_: an in situ soft x-ray photoemission study of epitaxial films

We investigate the electronic structure of high-quality single-crystal LaNiO$_3$ (LNO) thin films using in situ photoemission spectroscopy (PES). The in situ high-resolution soft x-ray PES measurements on epitaxial thin films reveal the intrinsic electronic structure of LNO. We find a new sharp feature in the PES spectra crossing the Fermi level, which is derived from the correlated Ni 3$d$ $e_g$ electrons. This feature shows significant enhancement of spectral weight with decreasing temperature. From a detailed analysis of resistivity data, the enhancement of spectral weight is attributed to increasing electron correlations due to antiferromagnetic fluctuations.

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preprint2005arXiv

Evidence for suppressed metallicity on the surface of La2-xSrxCuO4 and Nd2-xCexCuO4

Hard X-ray Photoemission spectroscopy (PES) of copper core electronic states, with a probing depth of $\sim$60 Å, is used to show that the Zhang-Rice singlet feature is present in La$_2$CuO$_4$ but is absent in Nd$_2$CuO$_4$. Hole- and electron doping in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) and Nd$_{2-x}$Ce$_x$CuO$_4$ (NCCO) result in new well-screened features which are missing in soft X-ray PES. Impurity Anderson model calculations establish metallic screening as its origin, which is strongly suppressed within 15 $\textÅ$ of the surface. Complemented with X-ray absorption spectroscopy, the small chemical-potential shift in core levels ($\sim0.2$ eV) are shown to be consistent with modifications of valence and conduction band states spanning the band gap ($\sim1$ eV) upon hole- and electron-doping in LSCO and NCCO.

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