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K. Bouzehouane

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Published work

11 published item(s)

preprint2020arXiv

Tailored flux pinning in superconductor/ferromagnet multilayers with engineered magnetic domain morphology from stripes to skyrmions

Superconductor/Ferromagnet (S/F) hybrid systems show interesting magneto-transport behaviors that result from the transfer of properties between both constituents. For instance, magnetic memory can be transferred from the F into the S through the pinning of superconducting vortices by the ferromagnetic textures. The ability to tailor this type of induced behavior is important to broaden its range of applications. Here we show that engineering the F magnetization reversal allows tuning the strength of the vortex pinning (and memory) effects, as well as the field range in which they appear. This is done by using magnetic multilayers in which Co thin films are combined with different heavy metals (Ru, Ir, Pt). By choosing the materials, thicknesses, and stacking order of the layers, we can design the characteristic domain size and morphology, from out-of-plane magnetized stripe domains to much smaller magnetic skyrmions. These changes strongly affect the magneto-transport properties. The underlying mechanisms are identified by comparing the experimental results to a magnetic pinning model.

preprint2015arXiv

A Dzyaloshinskii-Moriya Anisotropy in Nanomagnets with in-plane Magnetization

We report on a new source of in-plane anisotropy in nanomagnets due to the presence of Dzyaloshinskii-Moriya interaction (DMI). This anisotropy depends on the shape of the magnet, and is orthogonal to the demagnetization shape anisotropy. This effect originates from the DMI energy reduction due to an out-of-plane tilt of the spins at edges oriented perpendicular to the magnetization. Our investigation combining experimental, numerical and analytical results demonstrate that this energy reduction can compensate the demagnetization shape anisotropy energy in magnets of elongated shape, provided that their volumes is small enough and thus that their magnetization is quasi-uniform.

preprint2015arXiv

Perpendicular magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers via the Spin Hall Effect of Pt

We experimentally investigate the current-induced magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers combining the anomalous Hall effect and magneto-optical Kerr effect techniques in crossbar geometry. The magnetization reversal occurs through nucleation and propagation of a domain of opposite polarity for a current density of the order of 0.3 TA/m$^2$. In these experiments we demonstrate a full control of each stage: i)the Ørsted field controls the domain nucleation and ii) domain-wall propagation occurs by spin torque from the Pt spin Hall effect. This scenario requires an in-plane magnetic field to tune the domain wall center orientation along the current for efficient domain wall propagation. Indeed, as nucleated, domain walls are chiral and Néel like due to the interfacial Dzyaloshinskii-Moriya interaction.

preprint2015arXiv

Proximity driven commensurate pinning in YBa2Cu3O7 through all-oxide magnetic nanostructures

The design of artificial vortex pinning landscapes is a major goal towards large scale applications of cuprate superconductors. While disordered nanometric inclusions have shown to modify their vortex phase diagram and to produce enhancements of the critical current1,2, the effect of ordered oxide nanostructures remains essentially unexplored. This is due to the very small nanostructure size imposed by the short coherence length, and to the technological difficulties in the nanofabrication process. Yet, the novel phenomena occurring at oxide interfaces open a wide spectrum of technological opportunities to interplay with the superconductivity in cuprates. Here we show that the unusual long range suppression of the superconductivity occurring at the interface between manganites and cuprates affects vortex nucleation and provides a novel vortex pinning mechanism. In particular, we show evidence of commensurate pinning in YBCO films with ordered arrays of LCMO ferromagnetic nanodots. Vortex pinning results from the proximity induced reduction of the condensation energy at the vicinity of the magnetic nanodots, and yields an enhanced friction between the nanodot array and the moving vortex lattice in the liquid phase. This result shows that all-oxide ordered nanostructures constitute a powerful, new route for the artificial manipulation of vortex matter in cuprates.

preprint2011arXiv

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.

preprint2011arXiv

Hysteretic magnetic pinning and reversible resistance switching in High-Tc superconductor/ferromagnet multilayers

We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or increase of the mixed-state resistance is observed as magnetization reversal occurs within the Co/Pt multilayer. We demonstrate that stray magnetic fields cause these effects via i) creation of vortices/antivortices and ii) magnetostatic pinning of vortices that are induced by the external field.

preprint2010arXiv

Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls

In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.

preprint2009arXiv

Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality.

preprint2008arXiv

Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.

preprint2006arXiv

Electronic conductivity and structural distortion at the interface between insulators SrTiO3 and LaAlO3

When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as {100} surfaces of SrTiO3 are neutral while those of LaAlO3 are polar, but its microscopic mechanism is not quite understood. Here, we present a structural characterisation of this interface by aberration-corrected transmission electron microscopy. The unit cells at the interface appear elongated: we discuss this distortion in terms of electrostatic charge and extra carriers at the interface.

preprint2003arXiv

Nanolithography based on real-time electrically-controlled indentation with an atomic force microscope for nanocontacts elaboration

We report on the fabrication of nanocontacts by indentation of an ultrathin insulating photoresist layer deposited on various types of conductive structures. A modified atomic force microscope (AFM) designed for local resistance measurements is used as a nanoindenter. The nanoindentation is performed while measuring continuously the resistance between the conductive tip of the AFM and the conductive layer, which is used as the trigger parameter to stop the indentation. This allows an extremely accurate control of the indentation process. The indented hole is subsequently filled by a metal to create a contact on the underlying layer. We show that nanocontacts in the range of 1 to 10 nm2 can be created with this technique.