Researcher profile

K. Afanaciev

K. Afanaciev contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2024arXiv

A search for $μ^+\to e^+γ$ with the first dataset of the MEG II experiment

The MEG II experiment, based at the Paul Scherrer Institut in Switzerland, reports the result of a search for the decay $μ^+\to e^+γ$ from data taken in the first physics run in 2021. No excess of events over the expected background is observed, yielding an upper limit on the branching ratio of B($μ^+\to e^+γ$) < $7.5 \times 10^{-13}$ (90% C.L.). The combination of this result and the limit obtained by MEG gives B($μ^+\to e^+γ$) < $3.1 \times 10^{-13}$ (90% C.L.), which is the most stringent limit to date. A ten-fold larger sample of data is being collected during the years 2022-2023, and data-taking will continue in the coming years.

preprint2024arXiv

Operation and performance of MEG II detector

The MEG II experiment, located at the Paul Scherrer Institut (PSI) in Switzerland, is the successor to the MEG experiment, which completed data taking in 2013. MEG II started fully operational data taking in 2021, with the goal of improving the sensitivity of the mu+ -> e+ gamma decay down to 6e-14 almost an order of magnitude better than the current limit. In this paper, we describe the operation and performance of the experiment and give a new estimate of its sensitivity versus data acquisition time.

preprint2020arXiv

Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.