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Junze Deng

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2025arXiv

Observation of robust one-dimensional edge channels in a three-dimensional quantum spin Hall insulator

Topologically protected edge channels show prospects for quantum devices. They have been found experimentally in two-dimensional (2D) quantum spin Hall insulators (QSHIs), weak topological insulators and higher-order topological insulators (HOTIs), but the number of materials realizing these topologies is still quite limited. Here, we provide evidence for topological edge states within a novel topology named three-dimensional (3D) QSHIs. Its topology originates solely from a nonzero $S_z$ spin Chern number for each $k_z$ plane of the crystal and is realized in bulk $α$ -Bi $_4$ I $_4$ with trivial symmetry indicators, as we show by density functional theory calculations. We experimentally observe the related edge states at each type of monolayer and bilayer step of this material by scanning tunneling microscopy. Consistently, the edge states are neither interrupted, nor backscattered by defects at the step edges corroborating their helical character as expected from the nontrivial topology. Furthermore, two individual edge channels are directly observed at bilayer steps without visible interaction gap opening, demonstrating the robustness of these edge modes against vertical stacking. Our results establish $α$ -Bi $_4$ I $_4$ as the first material realization of a 3D QSHI whose definition goes beyond the scope of topological symmetry indicators, and provide a pathway for realizing nearly-quantized spin Hall conductivity per unit cell in a bulk crystal.

preprint2022arXiv

Quadrupole topological insulators in Ta2M3Te5 (M= Ni, Pd) monolayers

Higher-order topological insulators have been introduced in the precursory Benalcazar-Bernevig-Hughes quadrupole model, but no electronic compound has been proposed to be a quadrupole topological insulator (QTI) yet. In this work, we predict that Ta $_2M_3$ Te $_5$ ( $M=$ Pd, Ni) monolayers can be 2D QTIs with second-order topology due to the double-band inversion. A time-reversal-invariant system with two mirror reflections (M $_x$ and M $_y$ ) can be classified by Stiefel-Whitney numbers ( $w_1, w_2$ ) due to the combined symmetry $TC_{2z}$ . Using the Wilson loop method, we compute $w_1=0$ and $w_2=1$ for Ta $_2$ Ni $_3$ Te $_5$ , indicating a QTI with $q^{xy}=e/2$ . Thus, gapped edge states and localized corner states are obtained. By analyzing atomic band representations, we demonstrate that its unconventional nature with an essential band representation at an empty site, i.e., $A_g@4e$ , is due to the remarkable double-band inversion on Y- $Γ$ . Then, we construct an eight-band quadrupole model with $M_x$ and $M_y$ successfully for electronic materials. These transition-metal compounds of $A_2M_{1,3}X_5$ ( $A$ = Ta, Nb; $M$ = Pd, Ni; $X$ = Se, Te) family provide a good platform for realizing the QTI and exploring the interplay between topology and interactions.

preprint2022arXiv

Twisted nodal wires and three-dimensional quantum spin Hall effect in distorted square-net compounds

Recently, square-net materials have attracted lots of attention for the Dirac semimetal phase with negligible spin-orbit coupling (SOC) gap, e.g. ZrSiS/LaSbTe and CaMnSb $_2$ . In this paper, we demonstrate that the Jahn-Teller effect enlarges the nontrivial SOC gap in the distorted structure, e.g. LaAsS and SrZnSb $_2$ . Its distorted $X$ square-net layer ( $X=$ P, As, Sb, Bi) resembles a quantum spin Hall (QSH) insulator. Since these QSH layers are simply stacked in the $\hat{x}$ direction and weakly coupled, three-dimensional QSH effect can be expected in these distorted materials, such as insulating compounds CeAs $_{1+x}$ Se $_{1-y}$ and EuCdSb $_2$ . Our detailed calculations show that it hosts two twisted nodal wires without SOC [each consists of two noncontractible time-reversal symmetry- and inversion symmetry-protected nodal lines touching at a fourfold degenerate point], while with SOC it becomes a topological crystalline insulator with symmetry indicators $(000; 2)$ and mirror Chern numbers $(0, 0)$ . The nontrivial band topology is characterized by a generalized spin Chern number $C_{s+}=2$ when there is a gap between two sets of $\hat{s}_{x}$ eigenvalues. The nontrivial topology of these materials can be well reproduced by our tight-binding model and the calculated spin Hall conductivity is quantized to $σ^{x}_{yz} = (\frac{\hbar}{e})\frac{G_xe^2}{πh}$ with $G_x$ a reciprocal lattice vector.

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