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Researcher profile

Juntao Song

Juntao Song contributes to research discovery and scholarly infrastructure.

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cond-mat.dis-nncond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

9 published item(s)

preprint2020arXiv

The influence of anti-chiral edge states on Andreev reflection in graphene-superconductor junction

Using the tight binding model and the non-equilibrium Green function method, we study Andreev reflection in graphene-superconductor junction, where graphene has two nonequal Dirac Cones split in energy and therefore time reversal symmetry is broken. Due to the anti-chiral edge states of the current graphene model, an incident electron travelling along the edges makes distinct contribution to Andreev reflections. In a two-terminal device, because Andreev retro-reflection is not allowed for just the anti-chiral edges, in this case the mutual scattering between edge and bulk states is necessary, which leads that the coefficient of Andreev retro-reflection is always symmetrical about the incident energy. In a four-terminal junction, however, the edges are parallel to the interface of superconductor and graphene, so at the interface an incident electron travelling along the edges can be retro-reflected as a hole into bulk modes, or specularly reflected as a hole into anti-chiral edge states again. It is noted that, the coefficient of specular Andreev reflection keeps symmetric as to the incident energy of electron which is consistent with the reported results before, however the coefficient of Andreev retro-reflection shows an unexpected asymmetrical behavior due to the presence of anti-chiral edge states. Our results present some new ideas to study the anti-chiral edge modes and Andreev reflection for a graphene model with the broken time reversal symmetry.

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preprint2014arXiv

AIII and BDI Topological Systems at Strong Disorder

Using an explicit 1-dimensional model, we provide direct evidence that the one-dimensional topological phases from the AIII and BDI symmetry classes follow a $\mathbb Z$-classification, even in the strong disorder regime when the Fermi level is embedded in a dense localized spectrum. The main tool for our analysis is the winding number $ν$, in the non-commutative formulation introduced in I. Mondragon-Shem, J. Song, T. L. Hughes, and E. Prodan, arXiv:1311.5233. For both classes, by varying the parameters of the model and/or the disorder strength, a cascade of sharp topological transitions $ν=0 \rightarrow ν=1 \rightarrow ν=2$ is generated, in the regime where the insulating gap is completely filled with the localized spectrum. We demonstrate that each topological transition is accompanied by an Anderson localization-delocalization transition. Furthermore, to explicitly rule out a $\mathbb Z_2$ classification, a topological transition between $ν=0$ and $ν=2$ is generated. These two phases are also found to be separated by an Anderson localization-delocalization transition, hence proving their distinct identity.

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preprint2014arXiv

Characterization of the Quantized Hall Insulator Phase in the Quantum Critical Regime

The conductivity $σ$ and resistivity $ρ$ tensors of the disordered Hofstadter model are mapped as functions of Fermi energy $E_F$ and temperature $T$ in the quantum critical regime of the plateau-insulator transition (PIT). The finite-size errors are eliminated by using the non-commutative Kubo-formula. The results reproduce all the key experimental characteristics of this transition in Integer Quantum Hall (IQHE) systems. In particular, the Quantized Hall Insulator (QHI) phase is detected and analyzed. The presently accepted characterization of the QHI phase in the quantum critical regime, based entirely on experimental data, is fully supported by our theoretical investigation.

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preprint2014arXiv

Effect of Strong Disorder on 3-Dimensional Chiral Topological Insulators: Phase Diagrams, Maps of the Bulk Invariant and Existence of Topological Extended Bulk States

The effect of strong disorder on chiral-symmetric 3-dimensional lattice models is investigated via analytical and numerical methods. The phase diagrams of the models are computed using the non-commutative winding number, as functions of disorder strength and model's parameters. The localized/delocalized characteristic of the quantum states is probed with level statistics analysis. Our study re-confirms the accurate quantization of the non-commutative winding number in the presence of strong disorder, and its effectiveness as a numerical tool. Extended bulk states are detected above and below the Fermi level, which are observed to undergo the so called "levitation and pair annihilation" process when the system is driven through a topological transition. This suggests that the bulk invariant is carried by these extended states, in stark contrast with the 1-dimensional case where the extended states are completely absent and the bulk invariant is carried by the localized states.

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preprint2013arXiv

A controllable valley polarization in Graphene

The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which consists of several paralleling line-defects. The related incident angle can be controlled easily by tuning the parameters of the resonator. Therefore, a controllable 100% valley polarization, as well as the detection of the valley polarization, can be realized conveniently by tuning the number of line-defects and the distance between two nearest neighbouring line-defects. This fascinating finding opens a way to realize the valley polarization by line-defects. With the advancement of experimental technologies, this resonator is promising to be realized and thus plays a key role in graphene valleytronics.

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preprint2013arXiv

Disorder induced field effect transistor in bilayer and trilayer graphene

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the graphene layers. This effect is based on the bias voltage's ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.

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preprint2013arXiv

One-dimensional quantum channel in a graphene line defect

Using a tight-binding model, we study a line defect in graphene where a bulk energy gap is opened by sublattice symmetry breaking. It is found that sublattice symmetry breaking may induce many configurations that correspond to different band spectra. In particular, a gapless state is observed for a configuration which hold a mirror symmetry with respect to the line defect. We find that this gapless state originates from the line defect and is independent of the width of the graphene ribbon, the location of the line defect, and the potentials in the edges of the ribbon. In particular, the gapless state can be controlled by the gate voltage embedded below the line defect. Finally, this result is supported with conductance calculations. This study shows how a quantum channel could be constructed using a line defect, and how the quantum channel can be controlled by tuning the gate voltage embedded below the line defect.

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preprint2013arXiv

Topological Criticality in the Chiral-Symmetric AIII Class at Strong Disorder

The chiral AIII symmetry class in the periodic table of topological insulators contains topological phases classified by a winding number $ν$ for each odd space-dimension. An open problem for this class is the characterization of the phases and phase-boundaries in the presence of strong disorder. In this work, we derive a covariant real-space formula for $ν$ and, using an explicit 1-dimensional disordered topological model, we show that $ν$ remains quantized and non-fluctuating when disorder is turned on, even though the bulk energy-spectrum is completely localized. Furthermore, $ν$ remains robust even after the insulating gap is filled with localized states, but when the disorder is increased even further, an abrupt change of $ν$ to a trivial value is observed. Using exact analytic calculations, we show that this marks a critical point where the localization length diverges. As such, in the presence of disorder, the AIII class displays a markedly different physics from everything known to date, with robust invariants being carried entirely by localized states and bulk extended states emerging from an absolutely localized spectrum. Detailed maps and a clear physical description of the phases and phase boundaries are presented based on numerical and exact analytic calculations.

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preprint2012arXiv

The dependence of topological Anderson insulator on the type of disorder

This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different physical picture arises when bond disorder is considered. Using Born approximation theory, an explanation is given as to why bond disorder plays a different role in phase transition than does Anderson disorder. By comparing phase diagrams, conductance, conductance fluctuations, and the localization length for systems with different types of disorder, a consistent conclusion is obtained. The results indicate that a topological Anderson insulator is dependent on the type of disorder. These results are important for the doping processes used in preparation of topological insulators.

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