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Jung-Hwan Song

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cond-mat.mtrl-scicond-mat.mes-hall

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3 publications

preprint2012arXiv

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bulk-like states with small amplitudes at the surface. The topological surface states coexist with bulk-like states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulk-like surface states.

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preprint2010arXiv

Dirac cone engineering in Bi2_2Se3_3 thin films

Topological insulators are distinguished from normal insulators by their bulk insulating gap and odd number of surface states connecting the inverted conduction and valence bands and showing Dirac cones at the time-reversal invariant points in the Brillouin zone. Bi-based three-dimensional strong topological insulator materials, Bi2_2Se3_3 and Bi2_2Te2_2, are known as high temperature topological insulators for their relatively large bulk gap and have one simple Dirac cone at the ΓΓ point. In spite of their clear surface state Dirac cone features, the Dirac point known as a Kramers point and the topological transport regime is located below the bulk valence band maximum. As a result of a non-isolated Dirac point, the topological transport regime can not be acquired and there possibly exist scattering channels between surface and bulk states as well. In this article we show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi2_2Se3_3 with appropriate substitutions of surface Se atoms. In addition to Dirac cone engineering by surface atom substitutions, we also investigate Bi2_2Se3_3 thin films in terms of thickness and magnetic substitutions, which can be linked to applications of spintronics devices.

Open access
preprint2010arXiv

New Candidates for Topological Insulators : Pb-based chalcogenide series

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pbn_nBi2_2Sen+3_{n+3} and Pbn_nSb2_2Ten+3_{n+3}, are possible new candidates for topological insulators. As nn increases, the phase transition from a topological insulator to a band insulator is found to occur between n=2n=2 and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi2_2Se4_4 which is one of the largest gap topological insulators, and that Pb2_2Sb2_2Te5_5 is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb2_2Sb2_2Te5_5.

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