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Junfeng Gao

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cond-mat.mtrl-sci Artificial Intelligence Computation and Language Computational Engineering, Finance, and Science Machine Learning physics.chem-ph physics.comp-ph

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preprint2024arXiv

PLLaMa: An Open-source Large Language Model for Plant Science

Large Language Models (LLMs) have exhibited remarkable capabilities in understanding and interacting with natural language across various sectors. However, their effectiveness is limited in specialized areas requiring high accuracy, such as plant science, due to a lack of specific expertise in these fields. This paper introduces PLLaMa, an open-source language model that evolved from LLaMa-2. It's enhanced with a comprehensive database, comprising more than 1.5 million scholarly articles in plant science. This development significantly enriches PLLaMa with extensive knowledge and proficiency in plant and agricultural sciences. Our initial tests, involving specific datasets related to plants and agriculture, show that PLLaMa substantially improves its understanding of plant science-related topics. Moreover, we have formed an international panel of professionals, including plant scientists, agricultural engineers, and plant breeders. This team plays a crucial role in verifying the accuracy of PLLaMa's responses to various academic inquiries, ensuring its effective and reliable application in the field. To support further research and development, we have made the model's checkpoints and source codes accessible to the scientific community. These resources are available for download at \url{https://github.com/Xianjun-Yang/PLLaMa}.

preprint2022arXiv

Eliminating edge electronic and phonon states of phosphorene nanoribbon by unique edge reconstruction

Edge termination plays a vital role in determining the properties of 2D materials. By performing compelling ab initio simulations, a lowest-energy U-edge [ZZ(U)] reconstruction is revealed in the bilayer phosphorene. Such reconstruction reduces 60% edge energy compared with the pristine one and occurs almost without energy barrier, implying it should be the dominating edge in reality. The electronic band structure of phosphorene nanoribbon with such reconstruction resembles that of intrinsic 2D layer, exhibiting nearly edgeless band characteristics. Although ZZ(U) changes the topology of phosphorene nanoribbon (PNR), simulated TEM, STEM and STM images indicates it is very hard to be identified. One possible identify method is IR/Raman analyses because ZZ(U) edge alters vibrational modes dramatically. Beyond, it also increases the thermal conductivity of PNR 1.4 and 2.3 times than the pristine and Klein edges.

preprint2016arXiv

The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration

Phosphorene, a new two-dimensional (2D) semiconductor, has received much interest due to its robust direct band gap and high charge mobility. Currently, however, phosphorene can only be produced by mechanical or liquid exfoliation, and it is still a significant challenge to directly epitaxially grow phosphorene, which greatly hinders its mass production and, thus, applications. In epitaxial growth, the stability of nanoscale cluster or flake on a substrate is crucial. Here, we perform ab initio energy optimizations and molecular dynamics simulations to explore the critical role of substrate on the stability of a representative phosphorene flake. Our calculations show that the stability of the phosphorene nanoflake is strongly dependent on the interaction strength between the nanoflake and substrate. Specifically, the strong interaction (0.75 eV/P atom) with Cu(111) substrate breaks up the phosphorene nanoflake, while the weak interaction (0.063 eV/P atom) with h-BN substrate fails to stabilize its 2D structure. Remarkably, we find that a substrate with a moderate interaction (about 0.35 eV/P atom) is able to stabilize the 2D characteristics of the nanoflake on a realistic time scale. Our findings here provide useful guidelines for searching suitable substrates for the directly epitaxial growth of phosphorene.

preprint2015arXiv

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching competition reaction. We report herein the successful growth of wafer-scale high-quality h-BN monolayer film with the largest single crystalline domain sizes up to 72 micrometer in edge length using a folded Cu enclosure approach. The highly-confined growth space with this facile and unique approach enables the drastic decrease of nucleation centers together with the effective suppression of hydrogen etching reaction. It is revealed, for the first time, that the orientations of as-grown h-BN monolayers are strongly correlated with the crystalline facets of growth substrates, with the Cu (111) being the best substrate for growing high-quality single crystalline h-BN monolayer, consistent with the density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films and deepens the fundamental understanding of h-BN growth process.

preprint2011arXiv

Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge

The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation theory. Careful optimization of the supported carbon clusters, CN (with size N ranging from 1 to 24), on the Ni(111) surface indicates a ground state structure transformation from a one-dimensional (1D) C chain to a two-dimensional (2D) sp2 C network at N ~ 10-12. Furthermore, the crucial parameters controlling graphene growth on the metal surface, nucleation barrier, nucleus size, and the nucleation rate on a terrace or near a step edge, are calculated. In agreement with numerous experimental observations, our analysis shows that graphene nucleation near a metal step edge is superior to that on a terrace. Based on our analysis, we propose the use of seeded graphene to synthesize high-quality graphene in large area.