Researcher profile

Jun-Ling Chen

Jun-Ling Chen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - Baseline
4works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2016arXiv

Temperature dependence of the plastic scintillator detector for DAMPE

The Plastic Scintillator Detector (PSD) is one of the main sub-detectors in the DArk Matter Particle Explorer (DAMPE) project. It will be operated over a large temperature range from -$10$ to $30^{\circ}$C, so the temperature effect of the whole detection system should be studied in detail. The temperature dependence of the PSD system is mainly contributed by the three parts: the plastic scintillator bar, the photomultiplier tube (PMT), and the Front End Electronics (FEE). These three parts have been studied in detail and the contribution of each part has been obtained and discussed. The temperature coefficient of the PMT is $-0.320(\pm0.033)\%/^{\circ}$C, and the coefficient of the plastic scintillator bar is $-0.036(\pm0.038)\%/^{\circ}$C. This result means that after subtracting the FEE pedestal, the variation of the signal amplitude of the PMT-scintillator system due to temperature mainly comes from the PMT, and the plastic scintillator bar is not sensitive to temperature over the operating range. Since the temperature effect cannot be ignored, the temperature dependence of the whole PSD has been also studied and a correction has been made to minimize this effect. The correction result shows that the effect of temperature on the signal amplitude of the PSD system can be suppressed.

preprint2015arXiv

Self-blocking of interstitial clusters near metallic grain boundaries

Nano-crystallize materials have been known for decades to potentially owe the novel self-healing ability for radiation damage, which has been demonstrated to be especially linked to preferential occupation of interstitials at grain boundary (GB) and promoted vacancy-interstitial annihilation. A major obstacle to better understanding the healing property is the lack of an atomistic picture of the interstitial states near GBs, due to severely separation of the timescale of interstitial segregation from other events and abundance of interstitials at the GB. Here, we report a generic "self-blocking" effect of the interstitial cluster (SIAn) near the metallic GB in W, Mo and Fe. Upon creating a SIAn near the GB, it is immediately trapped by the GB during the GB structural relaxation and blocks there, impeding GB's further spontaneous trapping of the SIAn in the vicinity and making these SIAns stuck nearby the GB. The SIAn in the stuck state surprisingly owes an exceptionally larger number of annihilation sites with vacancies near the GB than the SIAn trapped at the GB due to maintaining its bulk configuration basically. Besides, it also has an unexpectedly long-ranged repelling interaction with the SIA in the bulk region, which may further affect the GB's trap of the SIAn. The self-blocking effect might shed light on more critical and extended role of the GB in healing radiation-damage in NCs than previously recognized the GB's limited role based on GB's trap for the SIA and resulted vacancy-SIA recombination.

preprint2013arXiv

Atomistic Mechanism from Vacancy Trapped H/He Atoms to Initiation of Bubble in W under Low Energy Ions Irradiation

With the first principles calculations of H and He induced energetics change we demonstrate that in W the accumulation of H (up to 9) and He (up to 4) in a single vacancy (V) surprisingly reduce the formation energy of first and second nearest vacancy (as low as 0 eV), which gives the direct evidence of V-H (He) complex mutation mechanism from V-Hn (Hen) to V2-Hn (Hen) and with the potential to lead to the growth of H (He)-vacancy complexes: an initial step to H and He bubble. This finding well explains the long-standing problem of why H and He bubbles being produced on W surface exposed to low-energy (far lower than displacement threshold energy) D or He ions irradiation. The further identified repulsive (attractive) interaction between V-H12 (V-He14) and additional H (He) illustrates the experimentally observed big difference of deposition depth of H (micron) and He (100 angstrom) bubbles in W even the migration rate of He is far larger than that of H.

preprint2010arXiv

First principle study of hydrogen behavior in hexagonal tungsten carbide

Understanding the behavior of hydrogen in hexagonal tungsten carbide (WC) is of particular interest for fusion reactor design due to the presence of WC in the divertor of fusion reactors. Therefore, we use first-principles calculations to study the hydrogen behavior in WC. The most stable interstitial site for the hydrogen atom is the projection of the octahedral interstitial site on tungsten basal plane, followed by the site near the projection of the octahedral interstitial site on carbon basal plane. The binding energy between two interstitial hydrogen atoms is negative, suggesting that hydrogen itself is not capable of trapping other hydrogen atoms to form a hydrogen molecule. The calculated results on the interaction between hydrogen and vacancy indicate that the hydrogen atom is energetically trapped by vacancy and the hydrogen molecule can not be formed in mono-vacancy. In addition, the hydrogen atom bound to carbon is only found in tungsten vacancy. We also study the migrations of hydrogen in WC and find that the interstitial hydrogen atom prefers to diffusion along the c axis. Our studies on the hydrogen behavior in WC provide some explanations for the experimental results of the thermal desorption process of energetic hydrogen ion implanted into WC.