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Julien Renard

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph cond-mat.other

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preprint2025arXiv

Gate-tunable spectrum and charge dispersion mitigation in a graphene superconducting qubit

Controlling the energy spectrum of quantum-coherent superconducting circuits, i.e. the energies of excited states, the circuit anharmonicity and the states' charge dispersion, is essential for designing performant qubits. This control is usually achieved by adjusting the circuit's geometry. In-situ control is traditionally obtained via an external magnetic field, in the case of tunnel Josephson junctions. More recently, semiconductor-weak-links-based Josephson junctions have emerged as an alternative building block with the advantage of tunability via the electric-field effect. Gate-tunable Josephson junctions have been succesfully integrated in superconducting circuits using for instance semiconducting nanowires or two-dimensional electron gases. In this work we demonstrate, in a graphene superconducting circuit, a large gate-tunability of qubit properties: frequency, anharmonicity and charge dispersion. We rationalize these features using a model considering the transmission of Cooper pairs through Andreev bound states. Noticeably, we show that the high transmission of Cooper pairs in such weak link strongly suppresses the charge dispersion. Our work illustrates the potential for graphene-based qubits as versatile building-blocks in advanced quantum circuits.

preprint2024arXiv

Direct measurement of a $\sin(2φ)$ current phase relation in a graphene superconducting quantum interference device

In a Josephson junction, the current phase relation relates the phase variation of the superconducting order parameter, $φ$, between the two superconducting leads connected through a weak link, to the dissipationless current . This relation is the fingerprint of the junction. It is usually dominated by a $\sin(φ)$ harmonic, however its precise knowledge is necessary to design superconducting quantum circuits with tailored properties. Here, we directly measure the current phase relation of a superconducting quantum interference device made with gate-tunable graphene Josephson junctions and we show that it can behave as a $\sin(2φ)$ Josephson element, free of the traditionally dominant $\sin(φ)$ harmonic. Such element will be instrumental for the development of superconducting quantum bits protected from decoherence.

preprint2021arXiv

A CMOS compatible platform for high impedance superconducting quantum circuits

Aluminium based platforms have allowed to reach major milestones for superconducting quantum circuits. For the next generation of devices, materials that are able to maintain low microwave losses while providing new functionalities, such as large kinetic inductance or compatibility with CMOS platform are sought for. Here we report on a combined direct current (DC) and microwave investigation of titanium nitride lms of dierent thicknesses grown using CMOS compatible methods. For microwave resonators made of TiN lm of thickness $\sim$3 nm, we measured large kinetic inductance LK $\sim$ 240 pH/sq, high mode impedance of $\sim$ 4.2 k$Ω$ while maintaining microwave quality factor $\sim$ 10^5 in the single photon limit. We present an in-depth study of the microwave loss mechanisms in these devices that indicates the importance of quasiparticles and provide insights for further improvement.

preprint2020arXiv

Anharmonicity in Raman-active phonon modes in atomically thin MoS$_2$

Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Raman spectroscopy, we studied the temperature dependence of the FWHM and Raman shift of $\mathrm{E_{2g}^1}$ and $\mathrm{A_{1g}}$ modes for single-layer and natural bilayer MoS$_2$ over a broad range of temperatures ($8 < $T$ < 300$ K). Both the Raman shift and FWHM of these modes show linear temperature dependence for $T>100$ K, whereas they become independent of temperature for $T<100$ K. Using first-principles calculations, we show that three-phonon anharmonic effects intrinsic to the material can account for the observed temperature-dependence of the line-width of both the modes. It also plays an important role in determining the temperature-dependence of the frequency of the Raman modes. The observed evolution of the line-width of the A$_{1g}$ mode suggests that electron-phonon processes are additionally involved. From the analysis of the temperature-dependent Raman spectra of MoS$_2$ on two different substrates -- SiO$_2$ and hexagonal boron nitride, we disentangle the contributions of external stress and internal impurities to these phonon-related processes. We find that the renormalization of the phonon mode frequencies on different substrates is governed by strain and intrinsic doping. Our work establishes the role of intrinsic phonon anharmonic effects in deciding the Raman shift in MoS$_2$ irrespective of substrate and layer number.

preprint2020arXiv

In-plane magnetic domains and Néel-like domain walls in thin flakes of the room temperature CrTe$_2$ van der Waals ferromagnet

The recent discovery of magnetic van der Waals materials has triggered a wealth of investigations in materials science, and now offers genuinely new prospects for both fundamental and applied research. Although the catalogue of van der Waals ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective x-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domains walls in micron-sized flakes of the CrTe$_2$ van der Waals ferromagnet. Flux-closure magnetic patterns suggesting in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back down the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have Néel texture, are preferentially oriented along directions separated by 120 degrees, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few mT only, showing that the CrTe$_2$ compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.

preprint2013arXiv

Origins of Nonlocality near the Dirac Point in Graphene

We present an experimental study of nonlocal electrical signals near the Dirac point in graphene. The in-plane magnetic field dependence of the nonlocal signal confirms the role of spin in this effect, as expected from recent predictions of Zeeman spin Hall effect in graphene, but our experiments show that thermo-magneto-electric effects also contribute to nonlocality, and the effect is sometimes stronger than that due to spin. Thermal effects are seen to be very sensitive to sample details that do not influence other transport parameters.

preprint2012arXiv

Defect-mediated spin relaxation and dephasing in graphene

A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the other hand, show that graphene's spin relaxation is orders of magnitude faster than predicted. We present a quantum interference measurement that disentangles sources of magnetic and non-magnetic decoherence in graphene. Magnetic defects are shown to be the primary cause of spin relaxation, while spin-orbit interaction is undetectably small.