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Researcher profile

Johann Coraux

Johann Coraux contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

10 published item(s)

preprint2026arXiv

Surface reconstruction-driven band folding and spin-orbit enhancement at the $α$-antimonene/Au(111) interface

The electronic properties of the two-dimensional (2D) $α$ phase of antimonene are unique, featuring unpinned Dirac cones that can be moved with strain. Here we investigate the structural and electronic properties of an epitaxial 2D $α$-antimonene, grown on Au(111). Using angle-resolved photoemission spectroscopy and density-functional theory, we reveal a strong hybridization at the Sb/Au interface, which imprints a rectangular reconstruction in the Au states, producing a band folding and hybrid bands exhibiting trigonal pockets. Additionally, hybridization displaces part of the Au wavefunction in regions of large electrostatic potential gradient, thereby enhancing spin-orbit splitting. Our work underscores that the pristine electronic properties of $α$-antimonene may be deeply modified by its substrate, and even overwhelmed by the bands of the latter, and also shows that spin-orbit interaction in a heavy metal (Au) can be substantially enhanced by a lighter element (Sb).

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Gate-tunable spectrum and charge dispersion mitigation in a graphene superconducting qubit

Controlling the energy spectrum of quantum-coherent superconducting circuits, i.e. the energies of excited states, the circuit anharmonicity and the states' charge dispersion, is essential for designing performant qubits. This control is usually achieved by adjusting the circuit's geometry. In-situ control is traditionally obtained via an external magnetic field, in the case of tunnel Josephson junctions. More recently, semiconductor-weak-links-based Josephson junctions have emerged as an alternative building block with the advantage of tunability via the electric-field effect. Gate-tunable Josephson junctions have been succesfully integrated in superconducting circuits using for instance semiconducting nanowires or two-dimensional electron gases. In this work we demonstrate, in a graphene superconducting circuit, a large gate-tunability of qubit properties: frequency, anharmonicity and charge dispersion. We rationalize these features using a model considering the transmission of Cooper pairs through Andreev bound states. Noticeably, we show that the high transmission of Cooper pairs in such weak link strongly suppresses the charge dispersion. Our work illustrates the potential for graphene-based qubits as versatile building-blocks in advanced quantum circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Direct measurement of a $\sin(2φ)$ current phase relation in a graphene superconducting quantum interference device

In a Josephson junction, the current phase relation relates the phase variation of the superconducting order parameter, $φ$, between the two superconducting leads connected through a weak link, to the dissipationless current . This relation is the fingerprint of the junction. It is usually dominated by a $\sin(φ)$ harmonic, however its precise knowledge is necessary to design superconducting quantum circuits with tailored properties. Here, we directly measure the current phase relation of a superconducting quantum interference device made with gate-tunable graphene Josephson junctions and we show that it can behave as a $\sin(2φ)$ Josephson element, free of the traditionally dominant $\sin(φ)$ harmonic. Such element will be instrumental for the development of superconducting quantum bits protected from decoherence.

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preprint2022arXiv

Two-way twisting of a confined monolayer: orientational ordering within the van der Waals gap between graphene and its crystalline substrate

Two-dimensional confinement of lattices produces a variety of order and disorder phenomena. When the confining walls have atomic granularity, unique structural phases are expected, of relevance in nanotribology, porous materials or intercalation compounds where \textit{e.g.} electronic states can emerge accordingly. The interlayer's own order is frustrated by the competing interactions exerted by the two confining surfaces. We revisit the concept of orientational ordering, introduced by Novaco and McTague to describe the twist of incommensurate monolayers on crystalline surfaces. We predict a two-way twist of the monolayer as its density increases. We discover such a behavior in alkali atom monolayers (sodium, cesium) confined between graphene and an iridium surface, using scanning tunneling microscopy and electron diffraction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anharmonicity in Raman-active phonon modes in atomically thin MoS$_2$

Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Raman spectroscopy, we studied the temperature dependence of the FWHM and Raman shift of $\mathrm{E_{2g}^1}$ and $\mathrm{A_{1g}}$ modes for single-layer and natural bilayer MoS$_2$ over a broad range of temperatures ($8 < $T$ < 300$ K). Both the Raman shift and FWHM of these modes show linear temperature dependence for $T>100$ K, whereas they become independent of temperature for $T<100$ K. Using first-principles calculations, we show that three-phonon anharmonic effects intrinsic to the material can account for the observed temperature-dependence of the line-width of both the modes. It also plays an important role in determining the temperature-dependence of the frequency of the Raman modes. The observed evolution of the line-width of the A$_{1g}$ mode suggests that electron-phonon processes are additionally involved. From the analysis of the temperature-dependent Raman spectra of MoS$_2$ on two different substrates -- SiO$_2$ and hexagonal boron nitride, we disentangle the contributions of external stress and internal impurities to these phonon-related processes. We find that the renormalization of the phonon mode frequencies on different substrates is governed by strain and intrinsic doping. Our work establishes the role of intrinsic phonon anharmonic effects in deciding the Raman shift in MoS$_2$ irrespective of substrate and layer number.

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preprint2020arXiv

Decoupling Molybdenum Disulfide from its Substrate by Cesium Intercalation

Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and electrical switches in this class of materials. The process of intercalation has been mostly studied in three-dimensional dichalcogenide films. Here, we address the case of a single-layer of molybdenum disulfide (MoS$_2$), deposited on a gold substrate, and intercalated with cesium (Cs) in ultra-clean conditions (ultrahigh vacuum). We show that intercalation decouples MoS$_2$ from its substrate. We reveal electron transfer from Cs to MoS$_2$, relative changes in the energy of the valence band maxima, and electronic disorder induced by structural disorder in the intercalated Cs layer. Besides, we find an abnormal lattice expansion of MoS$_2$, which we relate to immediate vicinity of Cs. Intercalation is thermally activated, and so is the reverse process of de-intercalation. Our work opens the route to a microscopic understanding of a process of relevance in several possible future technologies, and shows a way to manipulate the properties of two-dimensional dichalcogenides by &#34;under-cover&#34; functionalization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Depressions by stacking faults in nanorippled graphene on metals

A broad variety of defects has been observed in two-dimensional materials. Many of these defects can be created by top-down methods such as electron irradiation or chemical etching, while a few of them are created along bottom-up processes, in particular during the growth of the material, in which case avoiding their formation can be challenging. This occurs e.g. with dislocations, Stone-Wales defects, or atomic vacancies in graphene. Here we address a defect that has been observed repeatedly since 2007 in epitaxial graphene on metal surfaces like Ru(0001) and Re(0001), but whose nature has remained elusive thus far. This defect has the appearance of a vacant hill in the periodically nanorippled topography of graphene, which comes together with a moir{é} pattern. Based on atomistic simulations and scanning tunneling microscopy/spectroscopy measurements, we argue that such defects are topological in nature and that their core is a stacking fault patch, either in graphene, surrounded by loops of non-hexagonal carbon rings, or in the underlying metal. We discuss the possible origin of these defects in relation with recent reports of metastable polycyclic carbon molecules forming upon graphene growth. Like other defects, the vacant hills may be considered as deleterious in the perspective of producing high quality graphene. However, provided they can be organized in graphene, they might allow novel optical, spin, or electronic properties to be engineered.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

In-plane magnetic domains and Néel-like domain walls in thin flakes of the room temperature CrTe$_2$ van der Waals ferromagnet

The recent discovery of magnetic van der Waals materials has triggered a wealth of investigations in materials science, and now offers genuinely new prospects for both fundamental and applied research. Although the catalogue of van der Waals ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective x-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domains walls in micron-sized flakes of the CrTe$_2$ van der Waals ferromagnet. Flux-closure magnetic patterns suggesting in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back down the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have Néel texture, are preferentially oriented along directions separated by 120 degrees, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few mT only, showing that the CrTe$_2$ compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$

Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been unravelled in 2D electronic systems with spin long-range orderings, the scarcely reported room temperature magnetic vdW material has thus far hindered the related applications. Here, we show that intrinsic ferromagnetically aligned spin polarization can hold up to 316 K in a metallic phase of 1$T$-CrTe$_{2}$ in the few-layer limit. This room temperature 2D long range spin interaction may be beneficial from an itinerant enhancement. Spin transport measurements indicate an in-plane room temperature negative anisotropic magnetoresistance (AMR) in few-layered CrTe$_{2}$, but a sign change in the AMR at lower temperature, with -0.6$\%$ at 300 K and +5$\%$ at 10 K, respectively. This behavior may originate from the specific spin polarized band structure of CrTe$_{2}$. Our findings provide insights into magnetism in few-layered CrTe$_{2}$, suggesting potential for future room temperature spintronic applications of such 2D vdW magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Perpendicular anisotropy of ultrathin epitaxial cobalt films on graphene

Graphene is attractive for spintronics due to its long spin life time and high mobility. So far only thick and polycrystalline slabs have been used as ferromagnetic electrodes. We report the growth of flat, epitaxial ultrathin Co films on graphene. These display perpendicular magnetic anisotropy in the thickness range 0.5-1nm, which is confirmed by theory. PMA, epitaxy and ultrathin thickness bring new perspectives for graphene-based spintronic devices such as the zero-field control of an arbitrary magnetization direction, band matching between electrodes and graphene, and interface effects such as Rashba and electric field control of magnetism.

0 citations0 reviewsNo code linkedOpen access