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Julien Chaste

Julien Chaste contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Electroluminescence of monolayer WS$_2$ in a scanning tunneling microscope: the effect of bias polarity on the spectral and angular distribution of the emitted light

Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectroscopy and Fourier-space optical microscopy, we show that the bias polarity of the tunnel junction determines the spectral and angular distribution of the emitted light. At positive sample bias, only emission from excitonic species featuring an in-plane transition dipole moment is detected. Based on the spectral distribution of the emitted light, we infer that the dominant contribution is from charged excitons, i.e., trions. At negative sample bias, additional contributions from lower-energy excitonic species are evidenced in the emission spectra and the angular distribution of the emitted light reveals a mixed character of in-plane and out-of-plane transition dipole moments.

preprint2022arXiv

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.

preprint2014arXiv

Atomic monolayer deposition on the surface of nanotube mechanical resonators

We studied monolayers of noble gas atoms (Xe, Kr, Ar, and Ne) deposited on individual ultra- clean suspended nanotubes. For this, we recorded the resonance frequency of the mechanical motion of the nanotube, since it provides a direct measure of the coverage. The latter is the number of adsorbed atoms divided by the number of the carbon atoms of the suspended nanotube. Monolayers formed when the temperature was lowered in a constant pressure of noble gas atoms. The coverage of Xe monolayers remained constant at 1/6 over a large temperature range. This finding reveals that Xe monolayers are solid phases with a triangular atomic arrangement, and are commensurate with the underlying carbon nanotube. By comparing our measurements to theoretical calculations, we identify the phases of Ar and Ne monolayers as fluids, and we tentatively describe Kr monolayers as solid phases. These results underscore that mechanical resonators made from single nanotubes are excellent probes for surface science.

preprint2012arXiv

Parametric amplification and self-oscillation in a nanotube mechanical resonator

A hallmark of mechanical resonators made from a single nanotube is that the resonance frequency can be widely tuned. Here, we take advantage of this property to realize parametric amplification and self-oscillation. The gain of the parametric amplification can be as high as 18.2 dB and tends to saturate at high parametric pumping due to nonlinear damping. These measurements allow us to determine the coefficient of the linear damping force. The corresponding damping rate is lower than the one obtained from the lineshape of the resonance (without pumping), supporting the recently reported scenario that describes damping in nanotube resonators by a nonlinear force. The possibility to combine nanotube resonant mechanics and parametric amplification holds promise for future ultra-low force sensing experiments.