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Researcher profile

Julia Stähler

Julia Stähler contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.chem-phcond-mat.othercond-mat.softcond-mat.str-el

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Published work

5 published item(s)

preprint2023arXiv

$\mathrm{O_2}$ reduction at a DMSO/Cu(111) model battery interface

In order to develop a better understanding of electrochemical $\mathrm{O_2}$ reduction in non-aqueous solvents, we apply two-photon photoelectron spectroscopy to probe the dynamics of $\mathrm{O_2}$ reduction at a DMSO/Cu(111) model battery interface. By analyzing the temporal evolution of the photoemission signal, we observe the formation of $\mathrm{O_2^-}$ from a trapped electron state at the DMSO/vacuum interface. We find the vertical binding energy of $\mathrm{O_2^-}$ to be 3.80 $\pm$ 0.05 eV, in good agreement with previous results from electrochemical measurements, but with improved accuracy, potentially serving as a basis for future calculations on the kinetics of electron transfer at electrode interfaces. Modelling the $\mathrm{O_2}$ diffusion through the DMSO layer enables us to quantify the activation energy of diffusion (31 $\pm$ 6 meV), the diffusion constant (1 $\pm$ 1$\cdot 10^{-8}$ cm$^2$/s), and the reaction quenching distance for electron transfer to $\mathrm{O_2}$ in DMSO (12.4 $\pm$ 0.4 $\unicode{x212B}$), a critical value for evaluating possible mechanisms for electrochemical side reactions. These results ultimately will inform the development and optimization of metal-air batteries in non-aqueous solvents.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrafast charge carrier and exciton dynamics in an excitonic insulator probed by time-resolved photoemission spectroscopy

An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these ground state excitons stabilize a new phase by condensing at lower energy than the electrons at the valence band top, thereby widening the electronic band gap. The envisioned opportunity to explore many-boson phenomena in an excitonic insulator system is triggering a very active debate on how ground state excitons can be experimentally evidenced. Here, we employ a nonequilibrium approach to spectrally disentangle the photoinduced dynamics of an exciton condensate from the entwined signature of the valence band electrons. By means of time-and angle-resolved photoemission spectroscopy of the occupied and unoccupied electronic states, we follow the complementary dynamics of conduction and valence band electrons in the photoexcited low-temperature phase of Ta2 NiSe5 , the hitherto most promising single-crystal candidate to undergo a semiconductor-to-excitonic-insulator phase transition. The photoexcited conduction electrons are found to relax within less than 1 ps. Their relaxation time is inversely proportional to their excess energy, a dependence that we attribute to the reduced screening of Coulomb interaction and the low dimensionality of Ta2NiSe5 . Long after (> 10 ps) the conduction band has emptied, the photoemission intensity below the Fermi energy has not fully recovered the equilibrium value. Notably, this seeming carrier imbalance cannot be rationalized simply by the relaxation of photoexcited electrons and holes across the semiconducting band gap. [...]

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ultrafast generation and decay of a surface metal

Band bending at semiconductor surfaces induced by chemical doping or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of such metallic surfaces via BB on ultrafast timescales would facilitate a drastic manipulation of the conduction, magnetic and optical properties of semiconductors for high-speed electronics. Here, we demonstrate the ultrafast generation of a metal at the (10-10) surface of ZnO upon photoexcitation. Compared to hitherto known ultrafast photoinduced semiconductor-to-metal transitions that occur in the bulk of inorganic semiconductors, the metallization of the ZnO surface is launched by 3-4 orders of magnitude lower photon fluxes. Using time- and angle-resolved photoelectron spectroscopy, we show that the phase transition is caused by photoinduced downward surface band bending due to photodepletion of donor-type deep surface defects. At low photon flux, surface-confined excitons are formed. Above a critical exciton density, a Mott transition occurs, leading to a partially filled metallic band below the equilibrium Fermi energy. This process is in analogy to chemical doping of semiconductor surfaces. The discovered mechanism is not material-specific and presents a general route for controlling metallicity confined to semiconductor interfaces on ultrafast timescales.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Impact of electron solvation on ice structures at the molecular scale

We determine the impact of electron solvation on D$_2$O structures adsorbed on Cu(111) with low temperature scanning tunneling microscopy, two-photon photoemission, and ab initio theory. UV photons generating solvated electrons lead not only to transient, but also to permanent structural changes through the rearrangement of individual molecules. The persistent changes occur near sites with a high density of dangling OH groups that facilitate electron solvation. We conclude that energy dissipation during solvation triggers permanent molecular rearrangement via vibrational excitation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Photoexcited organic molecules $en~route$ to highly efficient autoionization

The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, after initial ultrafast relaxation on fs and ps timescales, an optically dark state is populated, likely the SP6 triplet (T) state, that undergoes Dexter-type energy transfer ($r_{\mathrm{Dex}} = 1.3~\mathrm{nm}$) and exhibits a long decay time of 0.1 s. Because of this long lifetime a photostationary state with average T-T distances below 2 nm is established at excitation densities in the $10^{20}~\mathrm{cm}^{-2}~\mathrm{s}^{-1}$ range. This large density enables decay by T-T annihilation (TTA) mediating autoionization despite an extremely low TTA rate of $k_{\mathrm{TTA}} = 4.5~10^{-26}~\mathrm{m}^3~\mathrm{s}^{-1}$. The large external quantum efficiency of the autoionization process (up to 15 %) and photocurrent densities in the \mathrm{mA}~\mathrm{cm}^{-2}$ range offer great potential for light-harvesting applications.

0 citations0 reviewsNo code linkedOpen access