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Juerg Leuthold

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Published work

8 published item(s)

preprint2022arXiv

Waveguide coupled III-V photodiodes monolithically integrated on Si

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n structure. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we observed a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

preprint2021arXiv

Carbon ablators with porosity designed for enhanced aerospace thermal protection

Porous carbon ablators offer cost-effective thermal protection for aerospace vehicles during re-entry into planetary atmospheres. However, the exploration of more distant planets requires the development of ablators that are able to withstand stronger thermal radiation conditions. Here, we report the development of bio-inspired porous carbon insulators with pore sizes that are deliberately tuned to enhance heat-shielding performance by increasing scattering of high-temperature thermal radiation. Pore size intervals that promote scattering are first estimated using an established model for the radiative contribution to the thermal conductivity of porous insulators. On the basis of this theoretical analysis, we identify a polymer additive that enables the formation of pores in the desired size range through the polymerization-induced phase separation of a mixture of phenolic resin and ethylene glycol. Optical and electron microscopy, porosimetry and mechanical tests are used to characterize the structure and properties of porous insulators prepared with different resin formulations. Insulators with pore sizes in the optimal scattering range reduce laser-induced damage of the porous structures by up to 42%, thus offering a promising and simple route for the fabrication of carbon ablators for enhanced thermal protection at high temperatures.

preprint2019arXiv

Waveguide-integrated van der Waals heterostructure photodetector at telecom band with high speed and high responsivity

Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In particular, photodetectors featuring both high-speed and high-responsivity performance are of great interest for a vast number of applications such as high-data-rate interconnects operated at standardized telecom wavelengths. Yet, the intrinsically small carrier mobilities of TMDCs become a bottleneck for high-speed application use. Here, we present high-performance vertical van der Waals heterostructure-based photodetectors integrated on a silicon photonics platform. Our vertical MoTe2/graphene heterostructure design minimizes the carrier transit path length in TMDCs and enables a record-high measured bandwidth of at least 24GHz under a moderate bias voltage of -3 volts. Applying a higher bias or employing thinner MoTe2 flakes boosts the bandwidth even to 50GHz. Simultaneously, our device reaches a high external responsivity of 0.2A/W for incident light at 1300nm, benefiting from the integrated waveguide design. Our studies shed light on performance trade-offs and present design guidelines for fast and efficient devices. The combination of 2D heterostructures and integrated guided-wave nano photonics defines an attractive platform to realize high-performance optoelectronic devices, such as photodetectors, light-emitting devices and electro-optic modulators.

preprint2016arXiv

Single-laser 32.5 Tbit/s Nyquist WDM transmission

We demonstrate 32.5 Tbit/s 16QAM Nyquist WDM transmission over a total length of 227 km of SMF-28 without optical dispersion compensation. A number of 325 optical carriers are derived from a single laser and encoded with dual-polarization 16QAM data using sinc-shaped Nyquist pulses. As we use no guard bands, the carriers have a spacing of 12.5 GHz equal to the Nyquist bandwidth of the data. We achieve a high net spectral efficiency of 6.4 bit/s/Hz using a software-defined transmitter which generates the electrical modulator drive signals in real-time.

preprint2015arXiv

Optical loss by surface transfer doping in silicon waveguides

We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond to higher electrical sheet resistances and are generally obtained with non-zero gate fields. The presence of free carriers for zero gate field is attributed to surface transfer doping. These results open new perspectives for minimizing propagation losses in silicon waveguides and for obtaining low-loss and highly conductive silicon films without applying a gate voltage.

preprint2015arXiv

Second-order nonlinear optical metamaterials: ABC-type nanolaminates

Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index, hyperbolic dispersion, or magnetic behavior at optical frequencies. Nonlinear optical properties, however, have only been demonstrated for patterned metallic films which suffer from high optical losses. Here we show that second-order nonlinear metamaterials can also be obtained from non-metallic centrosymmetric constituents with inherently low optical absorption. In our proof-of-principle experiments, we have iterated atomic-layer deposition (ALD) of three different constituents, A = Al$_2$O$_3$, B = TiO$_2$ and C = HfO$_2$. The centrosymmetry of the resulting ABC stack is broken since the ABC and the inverted CBA sequences are not equivalent - a necessary condition for non-zero second-order nonlinearity. To the best of our knowledge, this is the first realization of a bulk nonlinear optical metamaterial.

preprint2014arXiv

Coherent terabit communications with microresonator Kerr frequency combs

Optical frequency combs enable coherent data transmission on hundreds of wavelength channels and have the potential to revolutionize terabit communications. Generation of Kerr combs in nonlinear integrated microcavities represents a particularly promising option enabling line spacings of tens of GHz, compliant with wavelength-division multiplexing (WDM) grids. However, Kerr combs may exhibit strong phase noise and multiplet spectral lines, and this has made high-speed data transmission impossible up to now. Recent work has shown that systematic adjustment of pump conditions enables low phase-noise Kerr combs with singlet spectral lines. Here we demonstrate that Kerr combs are suited for coherent data transmission with advanced modulation formats that pose stringent requirements on the spectral purity of the optical source. In a first experiment, we encode a data stream of 392 Gbit/s on subsequent lines of a Kerr comb using quadrature phase shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM). A second experiment shows feedback-stabilization of a Kerr comb and transmission of a 1.44 Tbit/s data stream over a distance of up to 300 km. The results demonstrate that Kerr combs can meet the highly demanding requirements of multi-terabit/s coherent communications and thus offer a solution towards chip-scale terabit/s transceivers.

preprint2011arXiv

Photonic Wire Bonds for Terabit/s Chip-to-Chip Interconnects

Photonic integration has witnessed tremendous progress over the last years, and chip-scale transceiver systems with Terabit/s data rates have come into reach. However, as on-chip integration density increases, efficient off-chip interfaces are becoming more and more crucial. A technological breakthrough is considered indispensable to cope with the challenges arising from large-scale photonic integration, and this particularly applies to short-distance optical interconnects. In this letter we introduce the concept of photonic wire bonding, where transparent waveguide wire bonds are used to bridge the gap between nanophotonic circuits located on different chips. We demonstrate for the first time the fabrication of three-dimensional freeform photonic wire bonds (PWB), and we confirm their viability in a multi-Terabit/s data transmission experiment. First-generation prototypes allow for efficient broadband coupling with overall losses of only 1.6 dB. Photonic wire bonding will enable flexible optical multi-chip assemblies, thereby challenging the current paradigm of highly-complex monolithic integration.