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Jude Laverock

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3 publications

preprint2026arXiv

Local Structure of Epitaxial Single Crystal UO2+x_{2+x} Thin Films

The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO2_{2} films are tuned over an approximate stoichiometry range of 0.07≤x≤0.200.07 \leq x \leq 0.20, estimated with X-ray photoelectron spectroscopy measurements of the U−4f-4f and O−1s-1s peaks. The local structure of the thin films are then probed using extended X-ray absorption fine structure measurements at the U L3L_{3} absorption edge. We observe both the evolution of the U local environment of as a function of oxidation in UO2+x_{2+x}, and that the near stoichiometric UO2_{2} film replicates the local structure of bulk UO2_{2} material standards well. The series of stoichiometrically varied samples highlights the non-trivial transitional behaviour of the UO2+x_{2+x} oxygen sublattice with increasing oxygen content in this stoichiometric regime, while also demonstrating the efficacy of this thin film synthesis route for actinide studies beyond their established use as idealised surfaces, which could be readily adapted for further stoichiometrically tailored material studies and UO2+x_{2+x} device fabrication.

preprint2020arXiv

Extreme Fermi surface smearing in a maximally disordered concentrated solid solution

We show that the Fermi surface can survive the presence of extreme compositional disorder in the equiatomic alloy Ni0.25_{0.25}Fe0.25_{0.25}Co0.25_{0.25}Cr0.25_{0.25}. Our high-resolution Compton scattering experiments reveal a Fermi surface which is smeared across a significant fraction of the Brillouin zone (up to 40\% of 2πa\frac{2π}{a}). The extent of this smearing and its variation on and between different sheets of the Fermi surface has been determined, and estimates of the electron mean-free-path and residual resistivity have been made by connecting this smearing with the coherence length of the quasiparticle states.

preprint2013arXiv

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST.

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