Source author record

Jude Laverock

Jude Laverock appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2026arXiv

Local Structure of Epitaxial Single Crystal UO$_{2+x}$ Thin Films

The influence of oxygen stoichiometry on the uranium local environment is explored in epitaxial single crystal uranium oxide thin films grown by DC magnetron sputtering. Through post-growth annealing, the stoichiometry of as-grown UO$_{2}$ films are tuned over an approximate stoichiometry range of $0.07 \leq x \leq 0.20$, estimated with X-ray photoelectron spectroscopy measurements of the U$-4f$ and O$-1s$ peaks. The local structure of the thin films are then probed using extended X-ray absorption fine structure measurements at the U $L_{3}$ absorption edge. We observe both the evolution of the U local environment of as a function of oxidation in UO$_{2+x}$, and that the near stoichiometric UO$_{2}$ film replicates the local structure of bulk UO$_{2}$ material standards well. The series of stoichiometrically varied samples highlights the non-trivial transitional behaviour of the UO$_{2+x}$ oxygen sublattice with increasing oxygen content in this stoichiometric regime, while also demonstrating the efficacy of this thin film synthesis route for actinide studies beyond their established use as idealised surfaces, which could be readily adapted for further stoichiometrically tailored material studies and UO$_{2+x}$ device fabrication.

preprint2020arXiv

Extreme Fermi surface smearing in a maximally disordered concentrated solid solution

We show that the Fermi surface can survive the presence of extreme compositional disorder in the equiatomic alloy Ni$_{0.25}$Fe$_{0.25}$Co$_{0.25}$Cr$_{0.25}$. Our high-resolution Compton scattering experiments reveal a Fermi surface which is smeared across a significant fraction of the Brillouin zone (up to 40\% of $\frac{2π}{a}$). The extent of this smearing and its variation on and between different sheets of the Fermi surface has been determined, and estimates of the electron mean-free-path and residual resistivity have been made by connecting this smearing with the coherence length of the quasiparticle states.

preprint2013arXiv

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST.