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Ju Gao

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Published work

4 published item(s)

preprint2026arXiv

Angular--Momentum--Resolved Aharonov--Bohm Coupling Energy

We present an angular--momentum--resolved energetic formulation of the Aharonov--Bohm (AB) response for a confined Dirac electron based on two gauge--invariant interaction functionals: a magnetization--field functional and a current--potential functional. Using exact Dirac eigenmodes in a cylindrical cavity threaded by a solenoidal flux, we show that the magnetization--field functional yields a core--localized interaction energy restricted to the $l=0$ channel, with all higher angular--momentum contributions suppressed and vanishing entirely in the limit $a\!\to\!0$. The current--potential functional, by contrast, produces a finite, mode--dependent energy shift for $l\!\ge\!1$ in the same limit, arising from a local interaction between the solenoidal vector potential and the spatially distributed Dirac current, and explicitly encoding the geometric and topological structure of the coupling energy.

preprint2022arXiv

Electron Wave Spin in a Quantum Well

The particle-wave duality of the electron poses a principle question of whether the spin is a property of the particle or the wave. In this paper, the wave nature of the spin is studied for an electron inside a two-dimensional quantum well. By solving the exact $4-$spinor eigen solution to the Dirac equation, we show that a stable circulating total current density exists inside the well with a donut shaped topography. A spin value is modified by the confining geometry of the well. Our analysis also shows that a free electron Gaussian wavepacket is unstable and experiences quick decoherence.

preprint2020arXiv

Chargeable photoconductivity in Van der Waals heterojunctions

Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerable research has been performed and has reported valuable applications of photovoltaic cells, photodetectors, etc. However, simultaneous energy conversion and storage in a single device has not been achieved. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe2 layer and quasi-2D electron gas. After once optical illumination, the device stores the light-generated electrons and holes for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs takes place at the end of their lifetime, causing a release of heat; in contrast, infinite-lifetime photocarriers can be generated in CPC devices without a thermal loss. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-energy states below the critical temperature reaches as high as 109, with an external quantum efficiency of 4410000% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path towards storage-type photoconductors and high-efficiency entropy-decreasing devices.

preprint2015arXiv

Raman fingerprint of semi-metal WTe2 from bulk to monolayer

Tungsten ditelluride (WTe2), a layered transition-metal dichalcogenide (TMD), has recently demonstrated an extremely large magnetoresistance effect, which is unique among TMDs. This fascinating feature seems to be correlated with its special electronic structure. Here, we report the observation of 6 Raman peaks corresponding to the A_2^4, A_1^9, A_1^8, A_1^6, A_1^5 and A_1^2 phonons, from the 33 Raman-active modes predicted for WTe2. This provides direct evidence to distinguish the space group of WTe2 from that of other TMDs. Moreover, the Raman evolution of WTe2 from bulk to monolayer is clearly revealed. It is interesting to find that the A_2^4 mode, centered at ~109.8 cm-1, is forbidden in a monolayer, which may be attributable to the transition of the point group from C2v (bulk) to C2h (monolayer). Our work characterizes all observed Raman peaks in the bulk and few-layer samples and provides a route to study the physical properties of two-dimensional WTe2.