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Source author record

Józef Barnaś

Józef Barnaś appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

15 published item(s)

preprint2024arXiv

Skyrmion-deriven topological spin and charge Hall effects in diffusive antiferromagnetic thin films

We investigate topological Hall effects in a metallic antiferromagnetic (AFM) thin film and/or at the interface of an AFM insulator-normal metal bilayer with a single skyrmion in the diffusive regime. To determine the spin and charge Hall currents, we employed a Boltzmann kinetic equation with both spin-dependent and spin-flip scatterings. The interaction between conduction electrons and static skyrmions is included in the Boltzmann equation via the corresponding emergent magnetic field arising from the skyrmion texture. We compute intrinsic and extrinsic contributions to the topological spin Hall effect and spin accumulation, induced by an AFM skyrmion. We show that although the spin Hall current vanishes rapidly outside the skyrmion, the spin accumulation can be finite at the edges far from the skyrmion, provided the spin diffusion length is longer than the skyrmion radius. In addition, We show that in the presence of a spin-dependent relaxation time, the topological charge Hall effect is finite and we determine the corresponding Hall voltage. Our results may help to explore antiferromagnetic skyrmions by electrical means in real materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures

Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG equation, with magnetostriction effect taken into account, is developed to explain the measured dynamics. Based on this model, conditions for strong electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effect of magnetic anisotropy on spin-dependent thermoelectric effects in nanoscopic systems

Conventional and spin-related thermoelectric effects in electronic transport through a nanoscopic system exhibiting magnetic anisotropy $-$with both uniaxial and transverse components$-$ are studied theoretically in the linear response regime. In particular, a magnetic tunnel junction with a large-spin impurity $-$either a magnetic atom or a magnetic molecule$-$ embedded in the barrier is considered as an example. Owing to magnetic interaction with the impurity, conduction electrons traversing the junction can scatter on the impurity, which effectively can lead to angular momentum and energy exchange between the electrons and the impurity. As we show, such processes have a profound effect on the thermoelectric response of the system. Specifically, we present a detailed analysis of charge, spin and thermal conductance, together with the Seebeck and spin Seebeck coefficients (thermopowers). Since the scattering mechanism also involves processes when electrons are inelastically scattered back to the same electrode, one can expect the flow of spin and energy also in the absence of charge transport through the junction. This, in turn, results in a finite spin thermopower, and the magnetic anisotropy plays a key role for this effect to occur.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Rectification of radio frequency current in giant magnetoresistance spin valve

We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to the GMR effect, resistance of the strip oscillates following the magnetization dynamics. This leads to rectification of the applied radio frequency current and induces a direct current voltage $V_{DC}$. We present a theoretical description of this phenomenon and calculate the spin diode signal, $V_{DC}$, as a function of frequency, external magnetic field, and angle at which the external field is applied. A satisfactory quantitative agreement between theoretical predictions and experimental data has been achieved. Finally, we show that the spin diode signal in GMR devices is significantly stronger than in the anisotropic magnetoresistance permalloy-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-dependent thermoelectric effects in transport through a nanoscopic junction involving spin impurity

Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the linear-response regime. The impurity is described by the giant spin Hamiltonian, with both uniaxial and transverse magnetic anisotropy taken into account. Owing to the presence of transverse component of magnetic anisotropy, spin of a tunneling electron can be reversed during scattering on the impurity, even in the low temperature regime. This reversal appears due to exchange interaction of tunneling electrons with the magnetic impurity. We calculate Seebeck and spin Seebeck coefficients, and analyze their dependence on various parameters of the spin impurity and tunnel junction. In addition, conventional and spin figures of merit, as well as the electronic contribution to heat conductance are considered. We also show that pure spin current can be driven by a spin bias applied to the junction with spin impurity, even if no electron transfer between the electrodes can take place. The underlying mechanism employs single-electrode tunneling processes (electrode-spin exchange interaction) and the impurity as an intermediate reservoir of angular momentum.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-dependent thermoelectric properties of a Kondo-correlated quantum dot with Rashba spin-orbit coupling

Thermoelectric transport phenomena in a single-level quantum dot coupled to ferromagnetic leads are considered theoretically in the Kondo regime. The dot is described by the Anderson model with Rashba type spin-orbit interaction. The finite-U mean field slave boson technique is used to describe the transport characteristics, like heat conductance, thermopower, thermoelectric efficiency (figure of merit). The role of quantum interference effects in thermoelectric parameters is also analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-polarized Andreev transport influenced by Coulomb repulsion through two quantum dot system

Spin-polarized transport through a double quantum dot system attached to a common superconducting lead and two ferromagnetic electrodes (fork geometry) is investigated theoretically. The key objective of the analysis is to describe the influence of electrodes' ferromagnetism on the Andreev tunneling. Both direct and crossed Andreev tunneling processes are considered, in general. The other objective is a detailed analysis of the role of Coulomb interaction and its impact on the Andreev tunneling processes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-torque diode radio-frequency detector with voltage tuned resonance

We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Backhopping effect in magnetic tunnel junctions: comparison between theory and experiment

We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching between the magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness $t_b$, and is not observed in tunnel junctions with very thin MgO tunnel barriers, $t_b$ $<$ 0.95 nm. Switching dependence on the bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result at high bias voltages in a non-deterministic switching behavior, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom's/SMM's spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonant peaks in the average values of the molecule's spin and in the charge current. These features appear at some resonant fields and are observable when at least one of the electrodes is ferromagnetic. We also show that the conductance generally depends on the relative orientation of the average adatom's/SMM's spin and electrode's magnetic moment. This spin-valve like magnetoresistance effect can be used to control spin switching of the adatom's/SMM's spin.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature dependence of electronic transport through molecular magnets in the Kondo regime

The effects of finite temperature in transport through nanoscopic systems exhibiting uniaxial magnetic anisotropy D, such as molecular magnets, adatoms, or quantum dots side-coupled to a large spin are analyzed in the Kondo regime. The linear-response conductance is calculated by means of the full density-matrix numerical renormalization group method as a function of temperature T, magnetic anisotropy D, and exchange coupling J between the molecule's core spin and the orbital level. It is shown that such system displays a two-stage Kondo effect as a function of temperature and a quantum phase transition as a function of the exchange coupling J. Moreover, additional peaks are found in the linear conductance for temperatures of the order of T\sim|J| and T\simD. It is also shown that the conductance variation with T remarkably depends on the sign of the exchange coupling J.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Underscreened Kondo effect in S=1 magnetic quantum dots: Exchange, anisotropy and temperature effects

We present a theoretical analysis of the effects of uniaxial magnetic anisotropy and contact-induced exchange field on the underscreened Kondo effect in S=1 magnetic quantum dots coupled to ferromagnetic leads. First, by using the second-order perturbation theory we show that the coupling to spin-polarized electrode results in an effective exchange field $B_{\rm eff}$ and an effective magnetic anisotropy $D_{\rm eff}$. Second, we confirm these findings by using the numerical renormalization group method, which is employed to study the dependence of the quantum dot spectral functions, as well as quantum dot spin, on various parameters of the system. We show that the underscreened Kondo effect is generally suppressed due to the presence of effective exchange field and can be restored by tuning the anisotropy constant, when $|D_{\rm eff}| = |B_{\rm eff}|$. The Kondo effect can also be restored by sweeping an external magnetic field, and the restoration occurs twice in a single sweep. From the distance between the restored Kondo resonances one can extract the information about both the exchange field and the effective anisotropy. Finally, we calculate the temperature dependence of linear conductance for the parameters where the Kondo effect is restored and show that the restored Kondo resonances display a universal scaling of $S=1/2$ Kondo effect.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene p-n junctions with nonuniform Rashba spin-orbit coupling

Linear conductance of graphene-based p-n junctions with Rashba spin-orbit coupling is considered theoretically. A square potential step is used to model the junctions, while the coupling is introduced in terms of the Kane-Mele model (C.L. Kane and E.J. Mele, Phys.Rev.Lett. 95, 226801(2005)). The main objective is a description of electronic transport in junctions where Rashba parameter is nonuniform. Such a nonuniformity can appear when graphene is asymmetrically covered with atomic layers, or when Rashba coupling is strongly dependent on electric field. It is shown that conductance is significantly modified by the considered nonuniformity, which is most clearly manifested by an anomalous minimum at a certain potential step height.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Large enhancement of thermoelectric effects in a double quantum dot system due to interference and Coulomb correlation phenomena

Thermoelectric effects in a double quantum dot system coupled to external magnetic/nonmagnetic leads are investigated theoretically. The basic thermoelectric transport characteristics, like thermopower, electronic contribution to heat conductance, and the corresponding figure of merit, have been calculated in terms of the linear response theory and Green function formalism in the Hartree-Fock approximation for Coulomb interactions. An enhancement of the thermal efficiency (figure of merit ZT) due to Coulomb blockade has been found. The magnitude of ZT is further considerably enhanced by quantum interference effects. Both the Coulomb correlations and interference effects lead to strong violation of the Wiedemann-Franz law. The influence of spin-dependent transport and spin bias on the thermoelectric effects (especially on Seebeck and spin Seebeck effects) is also analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Current-induced dynamics of composite free layer with antiferromagnetic interlayer exchange coupling

Current-induced dynamics in spin valves including composite free layer with antiferromagnetic interlayer exchange coupling is studied theoretically within the diffusive transport regime. We show that current-induced dynamics of a synthetic antiferromagnet is significantly different from dynamics of a synthetic ferrimagnet. From macrospin simulations we obtain conditions for switching the composite free layer, as well as for appearance of various self-sustained dynamical modes. Numerical simulations are compared with simple analytical models of critical current based on linearized Landau-Lifshitz-Gilbert equation.

0 citations0 reviewsNo code linkedOpen access