Researcher profile

Joshua Hendrickson

Joshua Hendrickson contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Multi-spectral near perfect metamaterial absorbers using spatially multiplexed plasmon resonance metal square structures

Near perfect infrared light absorption at multi-spectral wavelengths has been experimentally demonstrated by using multiplexed metal square plasmon resonance structures. Optical power absorption over 95% has been observed in dual-band metamaterial absorbers at two separate wavelengths and optical power absorption over 92.5% has been observed in triple-band metamaterial absorbers at three separate wavelengths. The peak absorption wavelengths are primarily determined by the sizes of the metal squares in the multiplexed structures. Electrical field distributions in the middle of the dielectric spacer layer were calculated at the peak absorption wavelengths. It is shown that strong light absorption corresponds to the local quadrupole plasmon resonance modes in the metamaterial structures.

preprint2012arXiv

A wide-band perfect light absorber at mid-wave infrared using multiplexed metal structures

We experimentally demonstrate a wide band near perfect light absorber in the mid-wave infrared region using multiplexed plasmonic metal structures. The wide band near perfect light absorber is made of two different size gold metal squares multiplexed on a thin dielectric spacing layer on the top of a thick metal layer in each unit cell. We also fabricate regular non-multiplexed structure perfect light absorbers. The multiplexed structure IR absorber absorbs above 98% incident light over a much wider spectral band than the regular non-multiplexed structure perfect light absorbers in the mid-wave IR region.

preprint2010arXiv

Arrays of Ag split-ring resonators coupled to InGaAs single-quantum-well gain

We study arrays of silver split-ring resonators operating at around 1.5-μm wavelength coupled to an MBE-grown single 12.7-nm thin InGaAs quantum well separated only 4.8 nm from the wafer surface. The samples are held at liquid-helium temperature and are pumped by intense femtosecond optical pulses at 0.81-μm center wavelength in a pump-probe geometry. We observe much larger relative transmittance changes (up to about 8%) on the split-ring-resonator arrays as compared to the bare quantum well (not more than 1-2%). We also observe a much more rapid temporal decay component of the differential transmittance signal of 15 ps for the case of split-ring resonators coupled to the quantum well compared to the case of the bare quantum well, where we find about 0.7 ns. The latter observation is ascribed to the Purcell effect that arises from the evanescent coupling of the split-ring resonators to the quantum-well gain. All experimental results are compared with a recently introduced analytical toy model that accounts for this evanescent coupling, leading to excellent overall qualitative agreement.