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Researcher profile

Joseph P. Heremans

Joseph P. Heremans contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.chem-ph

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Published work

6 published item(s)

preprint2021arXiv

Giant anomalous Nernst signal in the antiferromagnet YbMnBi2

Searching for a high anomalous Nernst effect (ANE) is crucial for thermoelectric energy conversion applications because the associated unique transverse geometry facilitates module fabrication. Topological ferromagnets with large Berry curvatures show high ANEs; however, they face drawbacks such as strong magnetic disturbances and low mobility due to high magnetization. Herein, we demonstrate that YbMnBi2, a canted antiferromagnet, has a large ANE conductivity of ~10 Am-1K-1 that surpasses the common high values (i.e. 3-5 Am-1K-1) observed so far in ferromagnets. The canted spin structure of Mn guarantees a nonzero Berry curvature but generates only a weak magnetization three orders of magnitude lower than that of general ferromagnets. The heavy Bi with a large spin-orbit coupling enables a high ANE and low thermal conductivity, whereas its highly dispersive px/y orbitals ensure low resistivity. The high anomalous transverse thermoelectric performance and extremely small magnetization makes YbMnBi2 an excellent candidate for transverse thermoelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Shallow impurity band in ZrNiSn

ZrNiSn and related half Heusler compounds are candidate materials for efficient thermoelectric energy conversion with a reported thermoelectric figure-of-merit of n-type ZrNiSn exceeding unity. Progress on p-type materials has been more limited, which has been attributed to the presence of an impurity band, possibly related to the presence of Ni interstitials in nominally vacant 4d position. The specific energetic position of this band, however, has not been resolved. Here, we report results of a concerted theory-experiment investigation for a nominally undoped ZrNiSn, based on measurements of electrical resistivity, Hall coefficient, Seebeck coefficient and Nernst coefficient, measured in a temperature range from 80 to 420 K. The results are analyzed with a semi-analytical model combining a density functional theory (DFT) description for ideal ZrNiSn, with a simple analytical correction for the impurity band. The model provides a good quantitative agreement with experiment, describing all salient features in the full temperature span for the Hall, conductivity, and Seebeck measurements, while also reproducing key trends in the Nernst results. This comparison pinpoints the impurity band edge to 40 meV below the conduction band edge, which agrees well with a separate DFT study of a supercell containing Ni interstitials. Moreover, we corroborate our result with a separate study of ZrNiSn0.9Pb0.1 sample showing similar agreement with an impurity band edge shifted to 32 meV below the conduction band.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses

Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-assisted molecular beam epitaxy and consist of AlN/GaN heterostructures where Gd is delta-doped within a polarization-induced 2DEG. Ferromagnetism is observed in these Gd-doped 2DEGs with a Curie temperature above room temperature and an anisotropic spontaneous magnetization preferring an out-of-plane (c-axis) orientation. At magnetic fields up to 50 kOe, the magnetization remains smaller for in-plane configuration than for out-of-plane, which is indicative of exchange coupled spins locked along the polar c-axis. The sample with the lowest Gd concentration (2.3 $\times$ $10^{14}$ cm$^{-2}$) exhibits a saturation magnetization of 41.1 $μ_B/Gd^{3+}$ at 5 K revealing that the Gd ion spins (7 $μ_B$) alone do not account for the magnetization. Surprisingly, control samples grown without any Gd display inconsistent magnetic properties; in some control samples weak ferromagnetism is observed and in others paramagnetism. The ferromagnetic 2DEGs do not exhibit the anomalous Hall effect; the Hall resistance varies non-linearly with the magnetic field, but does not track the magnetization indicating the lack of coupling between the ferromagnetic phase and the conduction band electrons within the 2DEG.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids

A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn, leads to a redistribution of all electrons in the host, and, if designed properly, changes the location of the Fermi level EF and the density of conducting charge carriers near EF. The principle is proven experimentally in elemental Bi, whereby group III elements In and Ga dope Bi p-type, in spite of the fact that all three atoms are trivalent in the solid state. Electronic structure calculations show the formation of a hyperdeep defect state (HDS) and its effect on the EF in Bi doped with In (Bi:In) and Ga (Bi:Ga). The HDS at -5 to -6 eV below the EF of elemental Bi hybridizes with the Bi 6p electrons, and deprives the Bi valence band of two electrons per impurity atom. This then perturbs the electron count in the solid and lowers the EF. The charge on the impurity atoms is unchanged. In principle, this doping action does not result in the appearance of ionized impurities that scatter conduction electrons and holes in conventional doping. Experimentally, Shubnikov - de Haas and Hall Effect measurements show that adding In to Bi results in an increase in the density of holes. Thermoelectric, galvanomagnetic and thermomagnetic data are given for single-crystal and polycrystalline samples. In-doping leads to an enhancement of the thermoelectric figure of merit, which suggests that the new doping mechanism also gives a route to develop better thermoelectric materials. The same mechanism is at work for Sn-doped Bi (Bi:Sn), although here ionized impurity scattering is not avoided.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The effect of the magnon dispersion on the longitudinal spin Seebeck effect in yttrium iron garnets (YIG)

We study the temperature dependence of the longitudinal spin-Seebeck effect (LSSE) in a yttrium iron garnet Y3Fe5O12 (YIG) / Pt system for samples of different thicknesses. In this system, the thermal spin torque is magnon-driven. The LSSE signal peaks at a specific temperature that depends on the YIG sample thickness. We also observe freeze-out of the LSSE signal at high magnetic fields, which we attribute to the opening of an energy gap in the magnon dispersion. We observe partial freeze-out of the LSSE signal even at room temperature, where kBT is much larger than the gap. This suggests that a subset of the magnon population with an energy below kB x TC (TC about 40 K) contribute disproportionately to the LSSE; at temperatures below TC, we label these magnons subthermal magnons. The T-dependence of the LSSE at temperatures below the maximum is interpreted in terms of a new empirical model that ascribes most of the temperature dependence to that of the thermally driven magnon flux.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping

N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT) of all materials below 200K; here we investigate how filling multiple valence band pockets at T and H-points of the Brillouin zone produces high zT in p-type Sn-doped material. This approach, theoretically predicted to potentially give zT>1 in Bi, was used successfully in PbTe. We report thermopower, electrical and thermal conductivity (2 to 400K) of single crystals with 12<x<37 and polycrystals (x=50-90), higher Sb concentrations than previous studies. We obtain a 60% improvement in zT to 0.13.

0 citations0 reviewsNo code linkedOpen access