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Researcher profile

Hyungyu Jin

Hyungyu Jin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.plasm-ph

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Published work

5 published item(s)

preprint2021arXiv

Catalytic effect of plasma in lowering the reduction temperature of $Fe_{2}O_{3}$

Atmospheric pressure plasma (APP) generates highly reactive species that are useful for surface activations. We demonstrate a fast regeneration of iron oxides, that are popular catalysts in various industrial processes, using microwave-driven argon APP under ambient condition. The surface treatment of hematite powder by the APP with a small portion of hydrogen (0.5%) lowers the oxide's reduction temperature. A near-infrared laser is used for localized heating to control the surface temperature. Controlled experiments without plasma confirm the catalytic effect of the plasma. Raman, XRD, SEM, and XPS analyses show that the plasma treatment changed the chemical state of the hematite to that of magnetite without sintering.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses

Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-assisted molecular beam epitaxy and consist of AlN/GaN heterostructures where Gd is delta-doped within a polarization-induced 2DEG. Ferromagnetism is observed in these Gd-doped 2DEGs with a Curie temperature above room temperature and an anisotropic spontaneous magnetization preferring an out-of-plane (c-axis) orientation. At magnetic fields up to 50 kOe, the magnetization remains smaller for in-plane configuration than for out-of-plane, which is indicative of exchange coupled spins locked along the polar c-axis. The sample with the lowest Gd concentration (2.3 $\times$ $10^{14}$ cm$^{-2}$) exhibits a saturation magnetization of 41.1 $μ_B/Gd^{3+}$ at 5 K revealing that the Gd ion spins (7 $μ_B$) alone do not account for the magnetization. Surprisingly, control samples grown without any Gd display inconsistent magnetic properties; in some control samples weak ferromagnetism is observed and in others paramagnetism. The ferromagnetic 2DEGs do not exhibit the anomalous Hall effect; the Hall resistance varies non-linearly with the magnetic field, but does not track the magnetization indicating the lack of coupling between the ferromagnetic phase and the conduction band electrons within the 2DEG.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids

A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn, leads to a redistribution of all electrons in the host, and, if designed properly, changes the location of the Fermi level EF and the density of conducting charge carriers near EF. The principle is proven experimentally in elemental Bi, whereby group III elements In and Ga dope Bi p-type, in spite of the fact that all three atoms are trivalent in the solid state. Electronic structure calculations show the formation of a hyperdeep defect state (HDS) and its effect on the EF in Bi doped with In (Bi:In) and Ga (Bi:Ga). The HDS at -5 to -6 eV below the EF of elemental Bi hybridizes with the Bi 6p electrons, and deprives the Bi valence band of two electrons per impurity atom. This then perturbs the electron count in the solid and lowers the EF. The charge on the impurity atoms is unchanged. In principle, this doping action does not result in the appearance of ionized impurities that scatter conduction electrons and holes in conventional doping. Experimentally, Shubnikov - de Haas and Hall Effect measurements show that adding In to Bi results in an increase in the density of holes. Thermoelectric, galvanomagnetic and thermomagnetic data are given for single-crystal and polycrystalline samples. In-doping leads to an enhancement of the thermoelectric figure of merit, which suggests that the new doping mechanism also gives a route to develop better thermoelectric materials. The same mechanism is at work for Sn-doped Bi (Bi:Sn), although here ionized impurity scattering is not avoided.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The effect of the magnon dispersion on the longitudinal spin Seebeck effect in yttrium iron garnets (YIG)

We study the temperature dependence of the longitudinal spin-Seebeck effect (LSSE) in a yttrium iron garnet Y3Fe5O12 (YIG) / Pt system for samples of different thicknesses. In this system, the thermal spin torque is magnon-driven. The LSSE signal peaks at a specific temperature that depends on the YIG sample thickness. We also observe freeze-out of the LSSE signal at high magnetic fields, which we attribute to the opening of an energy gap in the magnon dispersion. We observe partial freeze-out of the LSSE signal even at room temperature, where kBT is much larger than the gap. This suggests that a subset of the magnon population with an energy below kB x TC (TC about 40 K) contribute disproportionately to the LSSE; at temperatures below TC, we label these magnons subthermal magnons. The T-dependence of the LSSE at temperatures below the maximum is interpreted in terms of a new empirical model that ascribes most of the temperature dependence to that of the thermally driven magnon flux.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhancement in the Figure of Merit of p-type BiSb alloys through multiple valence-band doping

N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT) of all materials below 200K; here we investigate how filling multiple valence band pockets at T and H-points of the Brillouin zone produces high zT in p-type Sn-doped material. This approach, theoretically predicted to potentially give zT>1 in Bi, was used successfully in PbTe. We report thermopower, electrical and thermal conductivity (2 to 400K) of single crystals with 12<x<37 and polycrystals (x=50-90), higher Sb concentrations than previous studies. We obtain a 60% improvement in zT to 0.13.

0 citations0 reviewsNo code linkedOpen access