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José M. Llorens

José M. Llorens appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2022arXiv

NIDN: Neural Inverse Design of Nanostructures

In the recent decade, computational tools have become central in material design, allowing rapid development cycles at reduced costs. Machine learning tools are especially on the rise in photonics. However, the inversion of the Maxwell equations needed for the design is particularly challenging from an optimization standpoint, requiring sophisticated software. We present an innovative, open-source software tool called Neural Inverse Design of Nanostructures (NIDN) that allows designing complex, stacked material nanostructures using a physics-based deep learning approach. Instead of a derivative-free or data-driven optimization or learning method, we perform a gradient-based neural network training where we directly optimize the material and its structure based on its spectral characteristics. NIDN supports two different solvers, rigorous coupled-wave analysis and a finite-difference time-domain method. The utility and validity of NIDN are demonstrated on several synthetic examples as well as the design of a 1550 nm filter and anti-reflection coating. Results match experimental baselines, other simulation tools, and the desired spectral characteristics. Given its full modularity in regard to network architectures and Maxwell solvers as well as open-source, permissive availability, NIDN will be able to support computational material design processes in a broad range of applications.

preprint2020arXiv

Impact of spectral effects on photovoltaic energy production: A case study in the United States

The time averaged efficiency of photovoltaic modules in the field is generally lower than the efficiency measured in the laboratory under standard testing conditions due to the combined effects of temperature and spectral variability, affecting the bankability of power plant projects. We report correction factors to account for spectral effects ranging from -2% to 1.3% of the produced energy for silicon modules depending on location and collector geometry. In high irradiance locations, the energy yield advantage of trackers is underestimated by 0.4% if spectral sensitivity effects are neglected. We find a correlation between the locations most favourable for tracking, and those most favourable for multijunctions. As the photovoltaic market grows to a multi-terawatt size, these seemingly small effects are expected to have an economic impact equivalent to tens of billions of dollars in the next few decades, far out-weighting the cost of the required research effort.

preprint2015arXiv

Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.