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Jörn P. Epping

Jörn P. Epping contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

High Fidelity 12-Mode Quantum Photonic Processor Operating at InGaAs Quantum Dot Wavelength

Reconfigurable quantum photonic processors are an essential technology for photonic quantum computing. Although most large-scale reconfigurable quantum photonic processors were demonstrated at the telecommunications C band around 1550 nm, high-performance single photon light sources utilizing quantum dots that are well-suited for photonic quantum computing operate at a variety of wavelengths. Thus, a demand exists for the compatibility of quantum photonic processors with a larger wavelength range. Silicon nitride (SiN) has a high confinement and wide transparency window, enabling compact, low-loss quantum photonic processors at wavelengths outside the C band. Here, we report a SiN universal 12-mode quantum photonic processor with optimal operation at a wavelength of 940 nm, which is compatible with InGaAs quantum dot light sources that emit light in the 900 nm to 970 nm wavelength range. The processor can implement arbitrary unitary transformations on its 12 input modes with a fidelity of 98.6 %, with a mean optical loss of 3.4 dB/mode.

preprint2019arXiv

Hybrid integrated semiconductor lasers with silicon nitride feedback circuits

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.