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Jörn P. Epping

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physics.optics physics.app-ph quant-ph

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preprint2022arXiv

High Fidelity 12-Mode Quantum Photonic Processor Operating at InGaAs Quantum Dot Wavelength

Reconfigurable quantum photonic processors are an essential technology for photonic quantum computing. Although most large-scale reconfigurable quantum photonic processors were demonstrated at the telecommunications C band around 1550 nm, high-performance single photon light sources utilizing quantum dots that are well-suited for photonic quantum computing operate at a variety of wavelengths. Thus, a demand exists for the compatibility of quantum photonic processors with a larger wavelength range. Silicon nitride (SiN) has a high confinement and wide transparency window, enabling compact, low-loss quantum photonic processors at wavelengths outside the C band. Here, we report a SiN universal 12-mode quantum photonic processor with optimal operation at a wavelength of 940 nm, which is compatible with InGaAs quantum dot light sources that emit light in the 900 nm to 970 nm wavelength range. The processor can implement arbitrary unitary transformations on its 12 input modes with a fidelity of 98.6 %, with a mean optical loss of 3.4 dB/mode.

preprint2019arXiv

Hybrid integrated semiconductor lasers with silicon nitride feedback circuits

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

preprint2015arXiv

High confinement, high yield Si3N4 waveguides for nonlinear optical application

In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

preprint2015arXiv

Ultrafast, low-power, all-optical switching via birefringent phase-matched transverse mode conversion in integrated waveguides

We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherently scatters probe light from one transverse waveguide mode into another. We introduce birefringent phase matching to enable efficient all-optically induced mode conversion at different wavelengths of the control and probe beam. It is shown that tailoring the waveguide geometry can be exploited to explicitly minimize intermodal group delay as well as to maximize the nonlinear coefficient, under the constraint of a phase matching condition. The waveguide geometries investigated here, allow for mode conversion with over two orders of magnitude reduced control pulse energy compared to previous schemes and thereby promise nonlinear mode switching exceeding efficiencies of 90% at switching energies below 1 nJ.

preprint2013arXiv

Integrated CARS Source based on Seeded Four-wave Mixing in Silicon Nitride

We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of magnitude lower than in previously reported approaches based on optical fibers. The tuning range of the wavelength conversion was calculated to be 1418 nm to 1518 nm (idler) and 788 nm to 857 nm (signal), which corresponds to a coverage of vibrational transitions from 2350 cm$^{-1}$ to 2810 cm$^{-1}$. A maximum conversion efficiency of 19.1% at a peak pump power of 300 W was obtained.