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Researcher profile

Jorg P. Kotthaus

Jorg P. Kotthaus contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2010arXiv

Damping of Nanomechanical Resonators

We study the transverse oscillatory modes of nanomechanical silicon nitride strings under high tensile stress as a function of geometry and mode index m <= 9. Reproducing all observed resonance frequencies with classical elastic theory we extract the relevant elastic constants. Based on the oscillatory local strain we successfully predict the observed mode-dependent damping with a single frequency independent fit parameter. Our model clarifies the role of tensile stress on damping and hints at the underlying microscopic mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Nonlinear Switching Dynamics in a Nanomechanical Resonator

The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing, memory elements, reduced noise characteristics in an oscillator or signal amplification. Approaching the quantum regime, concepts have been proposed that enable low backaction measurement techniques or facilitate the visualisation of quantum mechanical effects. Here we study the dynamic response of nanoelectromechanical resonators in the nonlinear regime aiming at a more detailed understanding and an exploitation for switching applications. Whereas most previous investigations concentrated on dynamic phenomena arising at the onset of bistability, we present experiments that yield insight into the non-adiabatic evolution of the system while subjected to strong driving pulses and the subsequent relaxation. Modeling the behaviour quantitatively with a Duffing oscillator, we can control switching between its two stable states at high speeds, exceeding recently demonstrated results by 10,000.

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preprint2005arXiv

Dynamics of Long-Living Excitons in Tunable Potential Landscapes

A novel method to experimentally study the dynamics of long-living excitons in coupled quantum well semiconductor heterostructures is presented. Lithographically defined top gate electrodes imprint in-plane artificial potential landscapes for excitons via the quantum confined Stark effect. Excitons are shuttled laterally in a time-dependent potential landscape defined by an interdigitated gate structure. Long-range drift exceeding a distance of 150 um at an exciton drift velocity > 1000 m/s is observed in a gradient potential formed by a resistive gate stripe.

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