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Joonyeon Chang

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cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall Emerging Technologies

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preprint2020arXiv

Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide

Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, tsw ~ 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve ~1 ms reliable (> 103 cycles) switching using yttria-stabilized zirconia (YSZ), which is ~ 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics.

preprint2020arXiv

Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures

Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy, leading to the formation of topological magnetic textures such as skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here, we report the experimental observation of Néel-type chiral magnetic skyrmions and their lattice (SkX) formation in a vdW ferromagnet Fe3GeTe2 (FGT). We demonstrate the ability to drive individual skyrmion by short current pulses along a vdW heterostructure, FGT/h-BN, as highly required for any skyrmion-based spintronic device. Using first principle calculations supported by experiments, we unveil the origin of DMI being the interfaces with oxides, which then allows us to engineer vdW heterostructures for desired chiral states. Our finding opens the door to topological spin textures in the 2D vdW magnet and their potential device application.

preprint2019arXiv

Magnetic skyrmion artificial synapse for neuromorphic computing

Since the experimental discovery of magnetic skyrmions achieved one decade ago, there have been significant efforts to bring the virtual particles into all-electrical fully functional devices, inspired by their fascinating physical and topological properties suitable for future low-power electronics. Here, we experimentally demonstrate such a device: electrically-operating skyrmion-based artificial synaptic device designed for neuromorphic computing. We present that controlled current-induced creation, motion, detection and deletion of skyrmions in ferrimagnetic multilayers can be harnessed in a single device at room temperature to imitate the behaviors of biological synapses. Using simulations, we demonstrate that such skyrmion-based synapses could be used to perform neuromorphic pattern-recognition computing using handwritten recognition data set, reaching to the accuracy of ~89 percents, comparable to the software-based training accuracy of ~94 percents. Chip-level simulation then highlights the potential of skyrmion synapse compared to existing technologies. Our findings experimentally illustrate the basic concepts of skyrmion-based fully functional electronic devices while providing a new building block in the emerging field of spintronics-based bio-inspired computing.

preprint2012arXiv

Magnetic field dependent impact ionization in InSb

Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is proposed. Impact ionization is suppressed by magnetic field. However, surface recombination is dependent on the polarity of magnetic field: strengthened in one direction and suppressed on the opposite direction. The former contributes quadratic increase to threshold electric field, and the latter gives additional linear dependence on magnetic field. Based on this study, electrical switching devices driven by magnetic field can be designed.

preprint2006arXiv

Electrical spin injection and detection in an InAs quantum well

We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring NiFe electrode. The observed spin diffusion length is 1.8 um at 20 K. The injected spin polarization across the NiFe/InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Our experimental results will contribute significantly to the realization of a practical spin field effect transistor.