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Jonathan P. Home

Jonathan P. Home contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2020arXiv

Robust dynamical exchange cooling with trapped ions

We investigate theoretically the possibility for robust and fast cooling of a trapped atomic ion by transient interaction with a pre-cooled ion. The transient coupling is achieved through dynamical control of the ions' equilibrium positions. To achieve short cooling times we make use of shortcuts to adiabaticity by applying invariant-based engineering. We design these to take account of imperfections such as stray fields, and trap frequency offsets. For settings appropriate to a currently operational trap in our laboratory, we find that robust performance could be achieved down to $6.3$ motional cycles, comprising $14.2\ \mathrm{μs}$ for ions with a $0.44\ \mathrm{MHz}$ trap frequency. This is considerably faster than can be achieved using laser cooling in the weak coupling regime, which makes this an attractive scheme in the context of quantum computing.

preprint2020arXiv

Scalable arrays of micro-Penning traps for quantum computing and simulation

We propose the use of 2-dimensional Penning trap arrays as a scalable platform for quantum simulation and quantum computing with trapped atomic ions. This approach involves placing arrays of micro-structured electrodes defining static electric quadrupole sites in a magnetic field, with single ions trapped at each site and coupled to neighbors via the Coulomb interaction. We solve for the normal modes of ion motion in such arrays, and derive a generalized multi-ion invariance theorem for stable motion even in the presence of trap imperfections. We use these techniques to investigate the feasibility of quantum simulation and quantum computation in fixed ion lattices. In homogeneous arrays, we show that sufficiently dense arrays are achievable, with axial, magnetron and cyclotron motions exhibiting inter-ion dipolar coupling with rates significantly higher than expected decoherence. With the addition of laser fields these can realize tunable-range interacting spin Hamiltonians. We also show how local control of potentials allows isolation of small numbers of ions in a fixed array and can be used to implement high fidelity gates. The use of static trapping fields means that our approach is not limited by power requirements as system size increases, removing a major challenge for scaling which is present in standard radio-frequency traps. Thus the architecture and methods provided here appear to open a path for trapped-ion quantum computing to reach fault-tolerant scale devices.

preprint2019arXiv

Direct characteristic-function tomography of quantum states of the trapped-ion motional oscillator

We implement direct readout of the symmetric characteristic function of quantum states of the motional oscillation of a trapped calcium ion. Using suitably chosen internal electronic state-dependent displacements based on bi-chromatic laser fields we map the expectation value of the real or imaginary part of the displacement operator to the internal states, which are subsequently read out using fluorescence detection. Combining the two readout results provides full information about the symmetric characteristic function. We characterize the performance of the technique by applying it to a range of archetypal quantum oscillator states, including displaced and squeezed Gaussian states as well as two and three component superpositions of displaced squeezed states which have applications in continuous variable quantum computing. For each, we discuss relevant features of the characteristic function and Wigner phase-space quasi-probability distribution. The direct reconstruction of these highly non-classical oscillator states using a reduced number of measurements is an essential tool for understanding and optimizing the control of these systems for quantum sensing and quantum information applications.

preprint2019arXiv

Segmented ion-trap fabrication using high precision stacked wafers

We describe the use of laser-enhanced etching of fused silica in order to build multi-layer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electro-static shielding of the ion from charge build-up on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here we are able to investigate designs which explore a trade-off between pseudo-potential barriers and confinement at the junction center. In both cases we illustrate the design constraints arising from the fabrication.