Researcher profile

Jonathan Gigax

Jonathan Gigax contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Machine learning interatomic potential for high throughput screening and optimization of high-entropy alloys

We have developed a machine learning-based interatomic potential (MLIP) for the quaternary MoNbTaW (R4) and quinary MoNbTaTiW (R5) high entropy alloys (HEAs). MLIPs enabled accurate high throughput calculations of elastic and mechanical properties of various non-equimolar R4 and R5 alloys, which are otherwise very time consuming calculations when performed using density functional theory (DFT). We demonstrate that the MLIP predicted properties compare well with the DFT results on various test cases and are consistent with the available experimental data. The MLIPs are also utilized for high throughput optimization of non equimolar R4 candidates by guided iterative tuning of R4 compositions to discover candidate materials with promising hardness-ductility combinations. We also used this approach to study the effect of Ti concentration on the elastic and mechanical properties of R4, by statistically averaging the properties of over 100 random structures. MLIP predicted hardness and bulk modulus of equimolar R4 and R5 HEAs are validated using experimentally measured Vickers hardness and modulus. This approach opens a new avenue for employing MLIPs for HEA candidate optimization.

preprint2019arXiv

Asymmetric Lattice Disorder Induced at Oxide Interfaces

Control of order-disorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells and batteries, ultra-high temperature ceramics, and durable nuclear waste forms. At present, the development of promising complex oxides for these applications is hindered by a poor understanding of how interfaces affect lattice disordering processes and defect transport. Here we explore the evolution of local disorder in ion-irradiated La$_2$Ti$_2$O$_7$ / SrTiO$_3$ thin film heterostructures using a combination of high-resolution scanning transmission electron microscopy (STEM), position-averaged convergent beam electron diffraction (PACBED), electron energy loss spectroscopy (STEM-EELS), and \textit{ab initio} theory calculations. We observe highly non-uniform lattice disordering driven by asymmetric oxygen vacancy formation across the interface. Our calculations indicate that this asymmetry results from differences in the polyhedral connectivity and vacancy formation energies of the two interface components, suggesting ways to manipulate lattice disorder in functional oxide heterostructures.