Source author record

Jonathan Finley

Jonathan Finley appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con physics.app-ph physics.optics

Catalog footprint

What is connected

7works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2026arXiv

Electric-current control of anomalous Hall effect

We demonstrate robust and reversible electric-current control of the anomalous Hall effect (AHE) in a two-dimensional WTe2/Fe3GeTe2 (FGT) stack. Applying a current through Td-WTe2 leads to a giant modulation of the AHE of the adjacent FGT layer, with the relative change of the AHE conductivity exceeding 180%. Control experiments show that i) the observed effect is absent in pure FGT, ii) the modulation weakens in thicker FGT films, confirming its interfacial origin, and iii) the modulation peaks for bilayer WTe2, indicating that the Berry-curvature dipole (BCD) plays the dominant role in the modulation. We propose that the charge current I generates an out-of-plane magnetization Mz via BCD in WTe2 and Mz modifies the exchange splitting of FGT via the inverse magnetic proximity effect, thereby altering its Berry curvature and nontrivially influencing the AHE. The demonstrated method of AHE control offers new possibilities for magnetism control, i.e., for the study of AHE-transistors as well as electric-current control of quantum magnets, especially magnetic insulators.

preprint2026arXiv

Zero-phonon line emission of single photon emitters in helium-ion treated MoS$_2$

We explore the zero-phonon line of single photon emitters in helium-ion treated monolayer MoS$_2$, which are currently understood in terms of single sulfur-site vacancies. By comparing the linewidths of the zero-phonon line as extracted directly from optical spectra with values inferred from the first-order autocorrelation function of the photoluminescence, we quantify bounds of the homogeneous broadening and of phonon-assisted contributions. The results are discussed in terms of both the independent boson model and ab-initio results as computed from GW and Bethe-Salpeter equation approximations.

preprint2015arXiv

Towards on-chip generation, routing and detection of non-classical light

We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quantum dots. By introducing a temporal filtering to the signal, we are able to resonantly excite the quantum dot and detect its resonance uorescence on-chip with the integrated superconducting single photon detector.

preprint2014arXiv

Emergence of photoswitchable states in a graphene-azobenzene-Au platform

The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in unpatterned graphene, but quasi-bound states \emph{can} occur for potentials with closed integrable dynamics. Here, we report the observation of resonance states in photo-switchable self-assembled molecular(SAM)-graphene hybrid. Conductive AFM measurements performed at room temperature reveal strong current resonances, the strength of which can be reversibly gated \textit{on-} and \textit{off-} by optically switching the molecular conformation of the mSAM. Comparisons of the voltage separation between current resonances ($\sim 70$--$120$ mV) with solutions of the Dirac equation indicate that the radius of the gating potential is $\sim 7 \pm 2$ nm with a strength $\geq 0.5$ eV. Our results and methods might provide a route toward \emph{optically programmable} carrier dynamics and transport in graphene nano-materials.

preprint2014arXiv

On-chip generation, routing and detection of quantum light

Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report the on-chip generation of quantum light from individual, resonantly excited self-assembled InGaAs quantum dots, efficient routing over length scales $\geq 1$ mm via GaAs ridge waveguides and in-situ detection using evanescently coupled integrated NbN superconducting single photon detectors fabricated on the same chip. By temporally filtering the time-resolved luminescence signal stemming from single, resonantly excited quantum dots we use the prototypical quantum optical circuit to perform time-resolved excitation spectroscopy on single dots and demonstrate resonant fluorescence with a line-width of $10 \pm 1 \ μ$eV; key elements needed for the use of single photons in prototypical quantum photonic circuits.

preprint2012arXiv

Optimisation of NbN thin films on GaAs substrates for in-situ single photon detection in structured photonic devices

We prepare NbN thin films by DC magnetron sputtering on [100] GaAs substrates, optimise their quality and demonstrate their use for efficient single photon detection in the near-infrared. The interrelation between the Nb:N content, growth temperature and crystal quality is established for 4-22nm thick films. Optimised films exhibit a superconducting critical temperature of 12.6\pm0.2K for a film thickness of 22\pm0.5nm and 10.2\pm0.2K for 4\pm0.5nm thick films. The optimum growth temperature is shown to be ~475°C reflecting a trade-off between enhanced surface diffusion, which improves the crystal quality, and arsenic evaporation from the GaAs substrate. Analysis of the elemental composition of the films provides strong evidence that the δ-phase of NbN is formed in optimised samples, controlled primarily via the nitrogen partial pressure during growth. By patterning optimum 4nm and 22nm thick films into a 100nm wide, 369μm long nanowire meander using electron beam lithography and reactive ion etching, we fabricated single photon detectors on GaAs substrates. Time-resolved studies of the photo-response, absolute detection efficiency and dark count rates of these detectors as a function of the bias current reveal maximum single photon detection efficiencies as high as 21\pm2% at 4.3\pm0.1K with ~50k dark counts per second for bias currents of 98%Ic at a wavelength of 950nm. As expected, similar detectors fabricated from 22nm thick films exhibit much lower efficiencies (0.004%) with very low dark count rates <=3cps. The maximum lateral extension of a photo-generated hotspot is estimated to be 30\pm8nm, clearly identifying the low detection efficiency and dark count rate of the thick film detectors as arising from hotspot cooling via the heat reservoir provided by the NbN film.

preprint2009arXiv

Resolution of the mystery of counter-intuitive photon correlations in far off-resonance emission from a quantum dot-cavity system

Cavity quantum-electrodynamics experiments using an atom coupled to a single radiation-field mode have played a central role in testing foundations of quantum mechanics, thus motivating solid-state implementations using single quantum dots coupled to monolithic nano-cavities. In stark contrast to their atom based counterparts, the latter experiments revealed strong cavity emission, even when the quantum dot is far off resonance. Here we present experimental and theoretical results demonstrating that this effect arises from the mesoscopic nature of quantum dot confinement, ensuring the presence of a quasi-continuum of transitions between excited quantum dot states that are enhanced by the cavity mode. Our model fully explains photon correlation measurements demonstrating that photons emitted at the cavity frequency are essentially uncorrelated with each other even though they are generated by a single quantum dot.